Alkane and alkanethiol passivation of halogenated Ge nanowires

Show simple item record Collins, Gillian Fleming, Peter G. Barth, Sven O'Dwyer, Colm Boland, John J. Morris, Michael A. Holmes, Justin D. 2018-08-28T15:47:31Z 2018-08-28T15:47:31Z 2010-11-16
dc.identifier.citation Collins, G., Fleming, P., Barth, S., O'Dwyer, C., Boland, J. J., Morris, M. A. and Holmes, J. D. (2010) 'Alkane and Alkanethiol Passivation of Halogenated Ge Nanowires', Chemistry of Materials, 22(23), pp. 6370-6377. doi: 10.1021/cm1023986 en
dc.identifier.volume 22 en
dc.identifier.startpage 6370 en
dc.identifier.endpage 6377 en
dc.identifier.issn 0897-4756
dc.identifier.doi 10.1021/cm1023986
dc.description.abstract The ambient stability and surface coverage of halogen (Cl, Br, and I) passivated germanium nanowires were investigated by X-ray photoelectron and X-ray photoelectron emission spectroscopy. After exposure to air for 24 h, the stability of the halogen-terminated Ge nanowire surfaces toward reoxidation was found to improve with the increasing size of the halogen atoms, i.e., I > Br > Cl. Halogen termination was effective in removing the native Ge oxide (GeOx) and could also be utilized for further functionalization. Functionalization of the halogenated Ge nanowires was investigated using alkyl Grignard reagents and alkanethiols. The stability of the alkyl and alkanethiol passivation layers from the different halogen-terminated surfaces was investigated by X-ray photoelectron spectroscopy and attenuated total reflectance infrared spectroscopy. Alkanethiol functionalized nanowires showed greater resistance against reoxidation of the Ge surface compared to alkyl functionalization when exposed to ambient conditions for 1 week. en
dc.description.sponsorship Higher Education Authority (HEA Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society (ACS) en
dc.rights © 2010 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see en
dc.subject Iodine en
dc.subject Alkylation en
dc.subject Bromine en
dc.subject Chlorine en
dc.subject Electrons en
dc.subject Emission spectroscopy en
dc.subject Germanium en
dc.subject Halogenation en
dc.subject Infrared spectroscopy en
dc.subject Nanowires en
dc.subject Paraffins en
dc.subject Passivation en
dc.subject Photons en
dc.subject X ray photoelectron spectroscopy en
dc.subject X rays en
dc.title Alkane and alkanethiol passivation of halogenated Ge nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2018-08-06T15:33:04Z
dc.description.version Accepted Version en
dc.internal.rssid 66662538
dc.internal.rssid 66662538
dc.contributor.funder Irish Research Council for Science, Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Chemistry of Materials en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Centre for Science Engineering and Technology (CSET)/08/CE/I1432/IE/CSET CRANN: 2nd Term funding/ en

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