Fully porous GaN p-n junctions fabricated by chemical vapor deposition: a green technology towards more efficient LEDs
Carvajal, Joan J.; Mena, Josue; Bilousov, Oleksandr V.; Martínez, Oscar; Jiménez, Juan J.; Zubialevich, Vitaly Z.; Parbrook, Peter J.; Geaney, Hugh; O'Dwyer, Colm; Diaz, Francesc; Aguilo, Magdalena
Date:
2015-05
Copyright:
© 2015 ECS - The Electrochemical Society
Citation:
Carvajal, J. J., Mena, J., Bilousov, O., Martínez, O., Jiménez, J., Zubialevich, V. Z., Parbrook, P. J., Geaney, H., O'Dwyer, C., Díaz, F. and Aguiló, M. (2015) '(Invited) Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs', ECS Transactions, 66(1), pp. 163-176. doi: 10.1149/06601.0163ecst
Abstract:
Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.
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