Porous to non-porous transition in the morphology of metal assisted etched silicon nanowires
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Date
2012-11-20
Authors
Lotty, Olan
Petkov, Nikolay
Georgiev, Yordan M.
Holmes, Justin D.
Journal Title
Journal ISSN
Volume Title
Publisher
IOP Publishing
Published Version
Abstract
A single step metal assisted etching (MAE) process, utilizing metal ion-containing HF solutions in the absence of an external oxidant, has been developed to generate heterostructured Si nanowires with controllable porous (isotropically etched) and non-porous (anisotropically etched) segments. Detailed characterisation of both the porous and non-porous sections of the Si nanowires was provided by transmission electron microscopy studies, enabling the mechanism of nanowire roughening to be ascertained. The versatility of the MAE method for producing heterostructured Si nanowires with varied and controllable textures is discussed in detail.
Description
Keywords
Porous silicon , Metal ions , Nanowires , Silicon , Transmission electron microscopy , HF solutions , Si nanowire , Silicon nanowires , Single-step
Citation
Olan, L., Nikolay, P., Yordan, M. G. and Justin, D. H. (2012) 'Porous to Nonporous Transition in the Morphology of Metal Assisted Etched Silicon Nanowires', Japanese Journal of Applied Physics, 51(11S), 11PE03 (5 pp). doi: 10.1143/JJAP.51.11PE03
Copyright
© 2012 The Japan Society of Applied PhysicsThis is an author-created, un-copyedited version of an article accepted for publication in the Japanese Journal of Applied Physics. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1143/JJAP.51.11PE03