Inherent control of growth, morphology and defect formation in germanium nanowires

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dc.contributor.author Biswas, Subhajit
dc.contributor.author Singha, Achintya
dc.contributor.author Morris, Michael A.
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2018-09-12T11:03:58Z
dc.date.available 2018-09-12T11:03:58Z
dc.date.issued 2012-10-15
dc.identifier.citation Biswas, S., Singha, A., Morris, M. A. and Holmes, J. D. (2012) 'Inherent Control of Growth, Morphology, and Defect Formation in Germanium Nanowires', Nano Letters, 12(11), pp. 5654-5663. doi: 10.1021/nl302800u en
dc.identifier.volume 12 en
dc.identifier.startpage 5654 en
dc.identifier.endpage 5663 en
dc.identifier.issn 1530-6984
dc.identifier.uri http://hdl.handle.net/10468/6757
dc.identifier.doi 10.1021/nl302800u
dc.description.abstract The use of bimetallic alloy seeds for growing one-dimensional nanostructures has recently gained momentum among researchers. The compositional flexibility of alloys provides the opportunity to manipulate the chemical environment, reaction kinetics, and thermodynamic behavior of nanowire growth, in both the eutectic and the subeutectic regimes. This Letter describes for the first time the role of AuxAg1–x alloy nanoparticles in defining the growth characteristics and crystal quality of solid-seeded Ge nanowires via a supercritical fluid growth process. The enhanced diffusivity of Ge in the alloy seeds, compared to pure Ag seeds, and slow interparticle diffusion of the alloy nanoparticles allows the realization of high-aspect ratio nanowires with diameters below 10 nm, via a seeded bottom-up approach. Also detailed is the influence the alloyed seeds have on the crystalline features of nanowires synthesized from them, that is, planar defects. The distinctive stacking fault energies, formation enthalpies, and diffusion chemistries of the nanocrystals result in different magnitudes of {111} stacking faults in the seed particles and the subsequent growth of ⟨112⟩-oriented nanowires with radial twins through a defect transfer mechanism, with the highest number twinned Ge nanowires obtained using Ag0.75Au0.25 growth seeds. Employing alloy nanocrystals for intrinsically dictating the growth behavior and crystallinity of nanowires could open up the possibility of engineering nanowires with tunable structural and physical properties. en
dc.description.sponsorship Higher Education Authority (HEA Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society (ACS) en
dc.relation.uri https://pubs.acs.org/doi/abs/10.1021/nl302800u
dc.rights © 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/nl302800u en
dc.subject AgxAu1−x alloy en
dc.subject Electron microscopy en
dc.subject Germanium en
dc.subject Nanowire en
dc.subject Supercritical fluid−solid−solid (SFSS) growth en
dc.subject Twin en
dc.title Inherent control of growth, morphology and defect formation in germanium nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-08-06T14:16:08Z
dc.description.version Accepted Version en
dc.internal.rssid 179566481
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanoletters en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2602/IE/Novel Nanowire Structures for Devices/ en


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