Selective sidewall wetting of polymer blocks in hydrogen silsesquioxane directed self-assembly of PS-b-PDMS

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Show simple item record Hobbs, Richard G. Farrell, Richard A. Bolger, Ciara T. Kelly, Róisín A. Morris, Michael A. Petkov, Nikolay Holmes, Justin D. 2018-09-12T11:25:29Z 2018-09-12T11:25:29Z 2012-08-02
dc.identifier.citation Hobbs, R. G., Farrell, R. A., Bolger, C. T., Kelly, R. A., Morris, M. A., Petkov, N. and Holmes, J. D. (2012) 'Selective Sidewall Wetting of Polymer Blocks in Hydrogen Silsesquioxane Directed Self-Assembly of PS-b-PDMS', ACS Applied Materials & Interfaces, 4(9), pp. 4637-4642. doi: 10.1021/am301012p en
dc.identifier.volume 4 en
dc.identifier.startpage 4637 en
dc.identifier.endpage 4642 en
dc.identifier.issn 1944-8244
dc.identifier.doi 10.1021/am301012p
dc.description.abstract We show the importance of sidewall chemistry for the graphoepitaxial alignment of PS-b-PDMS using prepatterns fabricated by electron beam lithography of hydrogen silsesquioxane (HSQ) and by deep ultraviolet (DUV) lithography on SiO2 thin films. Density multiplication of polystyrene-block-polydimethylsiloxane (PS-b-PDMS) within both prepatterns was achieved by using a room temperature dynamic solvent annealing environment. Selective tuning of PS and PDMS wetting on the HSQ template sidewalls was also achieved through careful functionalization of the template and substrate surface using either brush or a self-assembled trimethylsilyl monolayer. PDMS selectively wets HSQ sidewalls treated with a brush layer of PDMS, whiereas PS is found to selectively wet HSQ sidewalls treated with hexamethyldisilazane (HMDS) to produce a trimethylsilyl-terminated surface. The etch resistance of the aligned polymer was also evaluated to understand the implications of using block copolymer patterns which have high etch resistance, self-forming (PDMS) wetting layers at both interfaces. The results outlined in this work may have direct applications in nanolithography for continued device scaling toward the end-of-roadmap era. en
dc.description.sponsorship Science Foundation Ireland (09/IN.1/602); Higher Education (HEA Authority Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme), (National Access Program (NAP) for access to electron beam lithography provided by Tyndall National Institute (NAP 148/248)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society (ACS) en
dc.rights © 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see en
dc.subject Block copolymer en
dc.subject Electron beam lithography en
dc.subject Hydrogen silsesquioxane en
dc.subject Nanolithography en
dc.subject Surface functionalization en
dc.subject Templated self-assembly en
dc.title Selective sidewall wetting of polymer blocks in hydrogen silsesquioxane directed self-assembly of PS-b-PDMS en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2018-08-06T14:21:40Z
dc.description.version Accepted Version en
dc.internal.rssid 169067222
dc.contributor.funder Irish Research Council for Science, Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ACS Applied Materials & Interfaces en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Centre for Science Engineering and Technology (CSET)/08/CE/I1432/IE/CSET CRANN: 2nd Term funding/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1621/IE/Tuning surface and dopant properties of silicon and germanium nanowires for high performance nanowire-based field-effect transistors/ en

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