Fabrication of ordered, large scale, horizontally aligned Si nanowire arrays based on an in-situ hard mask block copolymer approach
Ghoshal, Tandra; Senthamaraikannan, Ramsankar; Shaw, Matthew T.; Holmes, Justin D.; Morris, Michael A.
Date:
2013-11-26
Copyright:
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Ghoshal, T. , Senthamaraikannan, R. , Shaw, M. T., Holmes, J. D. and Morris, M. A. (2014), Fabrication of Ordered, Large Scale, Horizontally‐Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach. Adv. Mater., 26: 1207-1216., which has been published in final form at https://doi.org/10.1002/adma.201304096. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
Citation:
Ghoshal, T., Senthamaraikannan, R., Shaw, M. T., Holmes, J. D. and Morris, M. A. (2014) 'Fabrication of Ordered, Large Scale, Horizontally-Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach', Advanced Materials, 26(8), pp. 1207-1216. doi: 10.1002/adma.201304096
Abstract:
A simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry.
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