Strategies for inorganic incorporation using neat block copolymer thin films for etch mask function and nanotechnological application

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dc.contributor.author Cummins, Cian
dc.contributor.author Ghoshal, Tandra
dc.contributor.author Holmes, Justin D.
dc.contributor.author Morris, Michael A.
dc.date.accessioned 2018-09-14T13:29:24Z
dc.date.available 2018-09-14T13:29:24Z
dc.date.issued 2016-10
dc.identifier.citation Cummins, C., Ghoshal, T., Holmes, J. D. and Morris, M. A. (2016) 'Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application', Advanced Materials, 28(27), pp. 5586-5618. doi: 10.1002/adma.201503432 en
dc.identifier.volume 28 en
dc.identifier.issued 27 en
dc.identifier.startpage 5586 en
dc.identifier.endpage 5618 en
dc.identifier.uri http://hdl.handle.net/10468/6790
dc.identifier.doi 10.1002/adma.201503432
dc.description.abstract Block copolymers (BCPs) and their directed self-assembly (DSA) has emerged as a realizable complementary tool to aid optical patterning of device elements for future integrated circuit advancements. Methods to enhance BCP etch contrast for DSA application and further potential applications of inorganic nanomaterial features (e.g., semiconductor, dielectric, metal and metal oxide) are examined. Strategies to modify, infiltrate and controllably deposit inorganic materials by utilizing neat self-assembled BCP thin films open a rich design space to fabricate functional features in the nanoscale regime. An understanding and overview on innovative ways for the selective inclusion/infiltration or deposition of inorganic moieties in microphase separated BCP nanopatterns is provided. Early initial inclusion methods in the field and exciting contemporary reports to further augment etch contrast in BCPs for pattern transfer application are described. Specifically, the use of evaporation and sputtering methods, atomic layer deposition, sequential infiltration synthesis, metal-salt inclusion and aqueous metal reduction methodologies forming isolated nanofeatures are highlighted in di-BCP systems. Functionalities and newly reported uses for electronic and non-electronic technologies based on the inherent properties of incorporated inorganic nanostructures using di-BCP templates are highlighted. We outline the potential for extension of incorporation methods to triblock copolymer features for more diverse applications. Challenges and emerging areas of interest for inorganic infiltration of BCPs are also discussed. en
dc.description.sponsorship Semiconductor Research Corporation (GRC Task 2444.001); Science Foundation Ireland (09/IN.1/602) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Wiley en
dc.relation.uri https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201503432
dc.rights © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Cummins, C. , Ghoshal, T. , Holmes, J. D. and Morris, M. A. (2016), Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application. Adv. Mater., 28: 5586-561, which has been published in final form at https://doi.org/10.1002/adma.201503432. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving. en
dc.subject Block copolymers en
dc.subject Thin films en
dc.subject Etch contrast en
dc.subject Nanolithography en
dc.subject Inorganic nanomaterials en
dc.title Strategies for inorganic incorporation using neat block copolymer thin films for etch mask function and nanotechnological application en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2018-08-08T10:16:41Z
dc.description.version Accepted Version en
dc.internal.rssid 366867765
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Semiconductor Research Corporation en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Advanced Materials en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/ en


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