Strategies for inorganic incorporation using neat block copolymer thin films for etch mask function and nanotechnological application

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Date
2016-10
Authors
Cummins, Cian
Ghoshal, Tandra
Holmes, Justin D.
Morris, Michael A.
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Wiley
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Research Projects
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Abstract
Block copolymers (BCPs) and their directed self-assembly (DSA) has emerged as a realizable complementary tool to aid optical patterning of device elements for future integrated circuit advancements. Methods to enhance BCP etch contrast for DSA application and further potential applications of inorganic nanomaterial features (e.g., semiconductor, dielectric, metal and metal oxide) are examined. Strategies to modify, infiltrate and controllably deposit inorganic materials by utilizing neat self-assembled BCP thin films open a rich design space to fabricate functional features in the nanoscale regime. An understanding and overview on innovative ways for the selective inclusion/infiltration or deposition of inorganic moieties in microphase separated BCP nanopatterns is provided. Early initial inclusion methods in the field and exciting contemporary reports to further augment etch contrast in BCPs for pattern transfer application are described. Specifically, the use of evaporation and sputtering methods, atomic layer deposition, sequential infiltration synthesis, metal-salt inclusion and aqueous metal reduction methodologies forming isolated nanofeatures are highlighted in di-BCP systems. Functionalities and newly reported uses for electronic and non-electronic technologies based on the inherent properties of incorporated inorganic nanostructures using di-BCP templates are highlighted. We outline the potential for extension of incorporation methods to triblock copolymer features for more diverse applications. Challenges and emerging areas of interest for inorganic infiltration of BCPs are also discussed.
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Keywords
Block copolymers , Thin films , Etch contrast , Nanolithography , Inorganic nanomaterials
Citation
Cummins, C., Ghoshal, T., Holmes, J. D. and Morris, M. A. (2016) 'Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application', Advanced Materials, 28(27), pp. 5586-5618. doi: 10.1002/adma.201503432
Copyright
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Cummins, C. , Ghoshal, T. , Holmes, J. D. and Morris, M. A. (2016), Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application. Adv. Mater., 28: 5586-561, which has been published in final form at https://doi.org/10.1002/adma.201503432. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.