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Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si
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Accepted Version
Date
2018-08-23
Authors
Dinh, Duc V.
Parbrook, Peter J.
Journal Title
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Volume Title
Publisher
Elsevier B.V.
Published Version
Abstract
Heteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si substrates (4°-miscut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown AlxGa1-xN/AlN interlayers were employed to control GaN surface orientations. Semipolar GaN layers with (101¯1), (202¯3) and (101¯2) surface orientations were achieved, as confirmed by X-ray diffraction. Due to the substrate miscut, the growth of (101¯1) layers was twinned along [11¯0]3C-SiC/Si and [1¯10]3C-SiC/Si while the growth of (202¯3) and (101¯2) layers was only along [110]3C-SiC/Si. The (101¯1) layers have rough surface morphology while the (202¯3) and (101¯2) layers have mirror-like smooth surface. For all samples with various surface orientations, different photoluminescence peak emission energies were observed at ∼3.45 eV, 3.78 eV and 3.27 eV at 10 K. These emissions are attributed to the near-band edge of hexagonal GaN, basal-plane stacking faults and partial dislocations, respectively. The dominant luminescence intensity of stacking faults indicates their high density in the GaN layers.
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Keywords
Metalorganic vapour phase epitaxy , Nitrides , GaN , Semiconducting aluminium compounds
Citation
Dinh, D. V. and Parbrook, P. J. (2018) 'Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si', Journal of Crystal Growth, 501, pp. 34-37. doi:10.1016/j.jcrysgro.2018.08.021