Atomic layer deposited electron transport layers in efficient organometallic halide perovskite devices
McCarthy, Melissa M.; Walter, Arnaud; Moon, Soo-Jin; Noel, Nakita K.; O'Brien, Shane; Pemble, Martyn E.; Nicolay, Sylvain; Wenger, Bernard; Snaith, Henry J.; Povey, Ian M.
Date:
2018-07-03
Copyright:
© Materials Research Society 2018. This article has been published in a revised form in MRS Advances, http://dx.doi.org/10.1557/adv.2018.515 This version is free to view and download for private research and study only. Not for re-distribution, re-sale or use in derivative works.
Citation:
McCarthy, M. M., Walter, A., Moon, S.-J., Noel, N. K., O’Brien, S., Pemble, M. E., Nicolay, S., Wenger, B., Snaith, H. J. and Povey, I. M. (2018) 'Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices', MRS Advances, 3(51), pp. 3075-3084. doi: 10.1557/adv.2018.515
Abstract:
Amorphous TiO2 and SnO2 electron transport layers (ETLs) were deposited by low-temperature atomic layer deposition (ALD). Surface morphology and x-ray photoelectron spectroscopy (XPS) indicate uniform and pinhole free coverage of these ALD hole blocking layers. Both mesoporous and planar perovskite solar cells were fabricated based on these thin films with aperture areas of 1.04 cm2 for TiO2 and 0.09 cm2 and 0.70 cm2 for SnO2. The resulting cell performance of 18.3 % power conversion efficiency (PCE) using planar SnO2 on 0.09 cm2 and 15.3 % PCE using mesoporous TiO2 on 1.04 cm2 active areas are discussed in conjunction with the significance of growth parameters and ETL composition.
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