Characterisation of the electroless nickel deposit as a barrier layer/under bump metallurgy on IC metallisation

Rohan, James F.; O'Riordan, Gerard

doi:10.1016/S0167-9317(02)00730-X

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dc.contributor.author	Rohan, James F.
dc.contributor.author	O'Riordan, Gerard
dc.date.accessioned	2019-03-13T16:46:19Z
dc.date.available	2019-03-13T16:46:19Z
dc.date.issued	2002-11-07
dc.identifier.citation	Rohan, J. F. and O’Riordan, G. (2003) 'Characterisation of the electroless nickel deposit as a barrier layer/under bump metallurgy on IC metallisation', Microelectronic Engineering, 65(1), pp. 77-85. doi: 10.1016/S0167-9317(02)00730-X	en
dc.identifier.volume	65	en
dc.identifier.startpage	77	en
dc.identifier.endpage	85	en
dc.identifier.issn	0167-9317
dc.identifier.uri	http://hdl.handle.net/10468/7622
dc.identifier.doi	10.1016/S0167-9317(02)00730-X
dc.description.abstract	Selective electroless nickel–phosphorus deposits on integrated circuit (IC) metallisation such as copper and aluminium were characterised using differential scanning calorimetry (DSC), X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) for elemental analysis. Annealing the Ni–P deposits in nitrogen atmospheres at temperatures compatible with organic dielectrics for IC components, such as polyimide, was performed to characterise the deposits. The crystallisation behaviour of the electroless nickel deposits with different concentrations of co-deposited phosphorus was examined.	en
dc.description.sponsorship	Enterprise Ireland (grant number HE-1999-262 from the Enterprise Ireland Applied Research Grant Scheme)	en
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	Elsevier	en
dc.relation.uri	http://www.sciencedirect.com/science/article/pii/S016793170200730X
dc.rights	© 2003 Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license	en
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/4.0/	en
dc.subject	Electroless	en
dc.subject	IC metallisation	en
dc.subject	Barrier	en
dc.subject	Crystallisation	en
dc.subject	Integrated circuits	en
dc.subject	Elemental analysis	en
dc.subject	Annealing	en
dc.subject	Crystallization	en
dc.subject	Dielectric materials	en
dc.subject	Differential scanning calorimetry	en
dc.subject	Electroless plating	en
dc.subject	Energy dispersive spectroscopy	en
dc.subject	Nickel deposits	en
dc.subject	Phosphate deposits	en
dc.subject	Polyimides	en
dc.subject	Scanning electron microscopy	en
dc.subject	X ray diffraction	en
dc.title	Characterisation of the electroless nickel deposit as a barrier layer/under bump metallurgy on IC metallisation	en
dc.type	Article (peer-reviewed)	en
dc.internal.authorcontactother	James Rohan, Tyndall Microsystems, University College Cork, Cork, Ireland. +353-21-490-3000 Email: james.rohan@tyndall.ie	en
dc.internal.availability	Full text available	en
dc.date.updated	2019-03-13T16:43:08Z
dc.description.version	Accepted Version	en
dc.internal.rssid	243945325
dc.internal.wokid	000180598000006
dc.contributor.funder	Enterprise Ireland	en
dc.description.status	Peer reviewed	en
dc.identifier.journaltitle	Microelectronic Engineering	en
dc.internal.copyrightchecked	No !!CORA!!	en
dc.internal.licenseacceptance	Yes	en
dc.internal.IRISemailaddress	james.rohan@tyndall.ie	en