Transferred III-V materials - novel devices and integration
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Published Version
Date
2017
Authors
Corbett, Brian M.
Loi, Ruggero
Quinn, D.
O'Callaghan, James
Liu, N.
Journal Title
Journal ISSN
Volume Title
Publisher
Optical Society of America
Published Version
Abstract
Separating the substrate allows thin layers of III-V photonic semiconductor materials and devices to be integrated on foreign templates using transfer-printing. We demonstrate advanced light emitting and detecting devices based on this principle.
Description
Keywords
Electron beam lithography , Emission , Laser coupling , Laser light , Optical components , Semiconductors
Citation
Corbett, B., Loi, R., Quinn, D., O'Callaghan, J. and Liu, N. (2017) 'Transferred III-V materials - novel devices and integration', Integrated Photonics Research, Silicon and Nanophotonics in Proceedings of Advanced Photonics 2017, New Orleans, Louisiana, United States, 24-27 July, ITu2A.4 (3pp). doi:10.1364/IPRSN.2017.ITu2A.4
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© 2017, Optical Society of America. All rights reserved.