Transferred III-V materials - novel devices and integration

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Transferred III-V materials - novel devices and integration

Corbett, Brian M.; Loi, Ruggero; Quinn, D.; O'Callaghan, James; Liu, N.
Date: 2017
Copyright: © 2017, Optical Society of America. All rights reserved.
Related: http://www.osapublishing.org/abstract.cfm?URI=IPRSN-2017-ITu2A.4
Citation: Corbett, B., Loi, R., Quinn, D., O'Callaghan, J. and Liu, N. (2017) 'Transferred III-V materials - novel devices and integration', Integrated Photonics Research, Silicon and Nanophotonics in Proceedings of Advanced Photonics 2017, New Orleans, Louisiana, United States, 24-27 July, ITu2A.4 (3pp). doi:10.1364/IPRSN.2017.ITu2A.4
Published Version: 10.1364/IPRSN.2017.ITu2A.4

Abstract:

Separating the substrate allows thin layers of III-V photonic semiconductor materials and devices to be integrated on foreign templates using transfer-printing. We demonstrate advanced light emitting and detecting devices based on this principle.

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