Electroless metal deposition for IC and TSV applications

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Electroless metal deposition for IC and TSV applications

Rohan, James F.; Casey, Declan P.; Zygowska, Monika; Moore, Michael; Shanahan, Brian
Date: 2014-12
Copyright: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Related: https://ieeexplore.ieee.org/document/7152175
Citation: Rohan, J. F., Casey, D., Zygowska, M., Moore, M. and Shanahan, B. (2014) 'Electroless metal deposition for IC and TSV applications', 2014 International 3D Systems Integration Conference (3DIC), Kinsale, Cork, Ireland 1-3 December, (3 pp). doi: 10.1109/3DIC.2014.7152175
Published Version: 10.1109/3DIC.2014.7152175

Abstract:

Ultrathin film electroless deposition of Cu and Ni is shown for IC and TSV barrier layer / interconnect applications as an alternative to vacuum based deposition techniques. Cu films of approximately 20 nm were achieved while coherent electroless Ni can be deposited to single digit nm levels. The use of self-assembled monolayers facilitates electroless deposition in high aspect ratio structures. This activation process in combination with ultrathin film barrier/seed layer deposition by electroless processing enables scaling for both IC and TSV interconnect applications.

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