Electroless metal deposition for IC and TSV applications

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dc.contributor.authorRohan, James F.
dc.contributor.authorCasey, Declan P.
dc.contributor.authorZygowska, Monika
dc.contributor.authorMoore, Michael
dc.contributor.authorShanahan, Brian
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Regional Development Funden
dc.contributor.funderIDA Irelanden
dc.date.accessioned2019-03-22T16:10:24Z
dc.date.available2019-03-22T16:10:24Z
dc.date.issued2014-12
dc.date.updated2019-03-22T16:01:47Z
dc.description.abstractUltrathin film electroless deposition of Cu and Ni is shown for IC and TSV barrier layer / interconnect applications as an alternative to vacuum based deposition techniques. Cu films of approximately 20 nm were achieved while coherent electroless Ni can be deposited to single digit nm levels. The use of self-assembled monolayers facilitates electroless deposition in high aspect ratio structures. This activation process in combination with ultrathin film barrier/seed layer deposition by electroless processing enables scaling for both IC and TSV interconnect applications.en
dc.description.sponsorshipEnterprise Ireland and IDA Ireland (iTech project within CCAN - the Collaborative Centre for Applied Nanotechnology (www.ccan.ie), supported by Enterprise Ireland & IDA Ireland (grant no. CC/2012/06a)); Enterprise Ireland (Enterprise Ireland Commercialisation Fund project Intecell (grant no. CF/2012/2341) co-funded by Enterprise Ireland and the European Regional Development Fund (ERDF) under the National Strategic Reference Framework (NSRF) 2014-2020)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRohan, J. F., Casey, D., Zygowska, M., Moore, M. and Shanahan, B. (2014) 'Electroless metal deposition for IC and TSV applications', 2014 International 3D Systems Integration Conference (3DIC), Kinsale, Cork, Ireland 1-3 December, (3 pp). doi: 10.1109/3DIC.2014.7152175en
dc.identifier.doi10.1109/3DIC.2014.7152175
dc.identifier.endpage3en
dc.identifier.isbn978-1-4799-8472-5
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/7666
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof3D Systems Integration Conference (3DIC), 2014 International
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Technology and Innovation Development Award (TIDA)/12/TIDA/I2355/IE/Probing the limits of ultrathin solution based meral and alloy deposition/en
dc.relation.urihttps://ieeexplore.ieee.org/document/7152175
dc.rights© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectElectrolessen
dc.subjectMetalen
dc.subjectDepositionen
dc.subjectThin filmen
dc.subjectInterconnecten
dc.subjectBarrier layersen
dc.subjectTSVen
dc.subjectFilmsen
dc.subjectNickelen
dc.subjectSiliconen
dc.subjectSubstratesen
dc.subjectIntegrated circuitsen
dc.subjectOxidationen
dc.subjectCopperen
dc.subjectElectroless depositionen
dc.subjectIntegrated circuit interconnectionsen
dc.subjectMetallic thin filmsen
dc.subjectMonolayersen
dc.subjectNickelen
dc.subjectSelf-assemblyen
dc.subjectThree-dimensional integrated circuitsen
dc.titleElectroless metal deposition for IC and TSV applicationsen
dc.typeConference itemen
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