Preparation and temperature cycling reliability of electroless Ni(P) under bump metallization

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dc.contributor.author Chen, Weimin
dc.contributor.author McCloskey, Paul
dc.contributor.author Rohan, James F.
dc.contributor.author Byrne, Patrick
dc.contributor.author McNally, Patrick J.
dc.date.accessioned 2019-03-28T10:15:02Z
dc.date.available 2019-03-28T10:15:02Z
dc.date.issued 2007-03-19
dc.identifier.citation Chen, W., McCloskey, P., Rohan, J. F., Byrne, P. and McNally, P. J. (2007) 'Preparation and temperature cycling reliability of electroless Ni(P) under bump metallization', IEEE Transactions on Components and Packaging Technologies, 30(1), pp. 144-151. doi:10.1109/TCAPT.2007.892094 en
dc.identifier.volume 30 en
dc.identifier.issued 1 en
dc.identifier.startpage 144 en
dc.identifier.endpage 151 en
dc.identifier.issn 1521-3331
dc.identifier.issn 1557-9972
dc.identifier.uri http://hdl.handle.net/10468/7679
dc.identifier.doi 10.1109/TCAPT.2007.892094
dc.description.abstract The reliability of electroless Ni(P) under-bump metallization (UBM) was evaluated via temperature cycling and solder bump shear strength tests. Commercial diodes and dummy dies fabricated in-house were used as substrates for the electroless Ni(P) UBM deposition. Solder bumps were formed after reflowing eutectic 63Sn37Pb solder foils over the Ni(P) UBM. The solder bump shear strength was measured before and after different temperature cycling. The results from this study showed that the UBM thickness and dimension had important effects on the solder bump shear strength and reliability. Both the larger UBM dimension and larger UBM thickness tended to induce higher stress in the UBM, which resulted in the lower solder bump shear strength and lower temperature cycling reliability. A better UBM structure solution for high current electronic packaging application is indicated in this paper. en
dc.description.sponsorship Enterprise Ireland (Strategic Research Grants Scheme 2000 Project: Low Loss Power Device Packaging (LOLPAC)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en
dc.relation.uri https://ieeexplore.ieee.org/document/4135412
dc.rights © 2007, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject Electroless Ni(P) deposition en
dc.subject Electronic packaging en
dc.subject Reliability en
dc.subject Shear strength test en
dc.subject Solder bump en
dc.subject Thermal cycling en
dc.subject Under-bump metallization en
dc.subject UBM en
dc.subject Ni(P) films en
dc.subject Aluminum bondpads en
dc.subject Intrinsic stress en
dc.subject Shear-strength en
dc.subject Solder en
dc.subject Sn3.5Ag en
dc.subject Deposit en
dc.subject Sn37Pb en
dc.title Preparation and temperature cycling reliability of electroless Ni(P) under bump metallization en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother James Rohan, Tyndall Microsystems, University College Cork, Cork, Ireland. +353-21-490-3000 Email: james.rohan@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2019-03-28T10:06:07Z
dc.description.version Accepted Version en
dc.internal.rssid 43336187
dc.internal.wokid 000245418400019
dc.contributor.funder Enterprise Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle IEEE Transactions on Components and Packaging Technologies en
dc.internal.copyrightchecked Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress james.rohan@tyndall.ie en


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