Atomic layer deposition of Cu with a carbene-stabilized Cu (i) silylamide

Hagen, Dirk J.; Povey, Ian M.; Rushworth, Simon; Wrench, Jacqueline S.; Keeney, Lynette; Schmidt, Michael; Petkov, Nikolay; Barry, Seán T.; Coyle, Jason P.; Pemble, Martyn E.

Atomic layer deposition of Cu with a carbene-stabilized Cu (i) silylamide

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Accepted version

Date

2014-09-14

Authors

Hagen, Dirk J.

Povey, Ian M.

Rushworth, Simon

Wrench, Jacqueline S.

Keeney, Lynette

Schmidt, Michael

Petkov, Nikolay

Barry, Seán T.

Coyle, Jason P.

Pemble, Martyn E.

Publisher

Royal Society of Chemistry (RSC)

Published Version

10.1039/C4TC01418A

Abstract

The metal–organic Cu(I) complex 1,3-diisopropyl-imidazolin-2-ylidene copper hexamethyl disilazide has been tested as a novel oxygen-free precursor for atomic layer deposition of Cu with molecular hydrogen. Being a strong Lewis base, the carbene stabilizes the metal centre to form a monomeric compound that can be vaporised and transported without visible degradation. A significant substrate dependence of the growth process not only with respect to the film material but also to the structure of the films was observed. On Pd surfaces continuous films are grown and no phase boundary can be observed between the Cu film and the Pd, while island growth is observed on Ru substrates, which as a consequence requires thicker films in order to achieve a fully coalesced layer. Island growth is also observed for ultra-thin (<10 nm) Pd layers on Si substrates. Possible explanations for the different growth modes observed are discussed.

Keywords

Atomic layer deposition , Metallic films , Deposition ALD

Citation

Hagen, D. J., Povey, I. M., Rushworth, S., Wrench, J. S., Keeney, L., Schmidt, M., Petkov, N., Barry, S. T., Coyle, J. P. and Pemble, M. E. (2014) 'Atomic layer deposition of Cu with a carbene-stabilized Cu(i) silylamide', Journal of Materials Chemistry C, 2(43), pp. 9205-9214. doi: 10.1039/C4TC01418A