Single crystalline Ge1.xMnx nanowires as building blocks for nanoelectronics
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Accepted version
Date
2008-11-25
Authors
van der Meulen, Machteld I.
Petkov, Nikolay
Morris, Michael A.
Kazakova, Olga
Han, Xinhai
Wang, Kang L.
Jacob, Ajey P.
Holmes, Justin D.
Journal Title
Journal ISSN
Volume Title
Publisher
American Chemical Society, ACS
Published Version
Abstract
Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5−1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.
Description
Keywords
Manganese , Crystalline materials , Doping (additives) , Effluent treatment , Electric wire , Germanium , Hole concentration , Hole mobility , Manganese compounds , Nanowires , Supercritical fluids , Building blocks , Electronic devices , Mn-doped , Mn-doping , Potential applications , Si and Ge nanowires , Single-crystalline , Spin-based devices
Citation
van der Meulen, M. I., Petkov, N., Morris, M. A., Kazakova, O., Han, X., Wang, K. L., Jacob, A. P. and Holmes, J. D. (2009) 'Single Crystalline Ge1-xMnx Nanowires as Building Blocks for Nanoelectronics', Nano Letters, 9(1), pp. 50-56. doi: 10.1021/nl802114x
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Copyright
© 2009 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/nl802114x