Single crystalline Ge1.xMnx nanowires as building blocks for nanoelectronics
dc.contributor.author | van der Meulen, Machteld I. | |
dc.contributor.author | Petkov, Nikolay | |
dc.contributor.author | Morris, Michael A. | |
dc.contributor.author | Kazakova, Olga | |
dc.contributor.author | Han, Xinhai | |
dc.contributor.author | Wang, Kang L. | |
dc.contributor.author | Jacob, Ajey P. | |
dc.contributor.author | Holmes, Justin D. | |
dc.contributor.funder | Irish Research Council for Science, Engineering and Technology | en |
dc.contributor.funder | Science Foundation Ireland | en |
dc.contributor.funder | University of California, Los Angeles | en |
dc.date.accessioned | 2019-07-12T14:37:59Z | |
dc.date.available | 2019-07-12T14:37:59Z | |
dc.date.issued | 2008-11-25 | |
dc.date.updated | 2019-06-28T15:46:11Z | |
dc.description.abstract | Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5−1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices. | en |
dc.description.sponsorship | University of California, Los Angeles (UCLA, Western Institute of Nanoelectronics (WIN)) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | van der Meulen, M. I., Petkov, N., Morris, M. A., Kazakova, O., Han, X., Wang, K. L., Jacob, A. P. and Holmes, J. D. (2009) 'Single Crystalline Ge1-xMnx Nanowires as Building Blocks for Nanoelectronics', Nano Letters, 9(1), pp. 50-56. doi: 10.1021/nl802114x | en |
dc.identifier.doi | 10.1021/nl802114x | en |
dc.identifier.endpage | 56 | en |
dc.identifier.issn | 1530-6984 | |
dc.identifier.issued | 1 | en |
dc.identifier.journaltitle | Nano Letters | en |
dc.identifier.startpage | 50 | en |
dc.identifier.uri | https://hdl.handle.net/10468/8158 | |
dc.identifier.volume | 9 | en |
dc.language.iso | en | en |
dc.publisher | American Chemical Society, ACS | en |
dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Research Frontiers Programme (RFP)/07/RFP/MASF710/IE/Nanocable Arrays for Future Electronics/ | en |
dc.relation.uri | https://pubs.acs.org/doi/abs/10.1021/nl802114x | |
dc.rights | © 2009 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/nl802114x | en |
dc.subject | Manganese | en |
dc.subject | Crystalline materials | en |
dc.subject | Doping (additives) | en |
dc.subject | Effluent treatment | en |
dc.subject | Electric wire | en |
dc.subject | Germanium | en |
dc.subject | Hole concentration | en |
dc.subject | Hole mobility | en |
dc.subject | Manganese compounds | en |
dc.subject | Nanowires | en |
dc.subject | Supercritical fluids | en |
dc.subject | Building blocks | en |
dc.subject | Electronic devices | en |
dc.subject | Mn-doped | en |
dc.subject | Mn-doping | en |
dc.subject | Potential applications | en |
dc.subject | Si and Ge nanowires | en |
dc.subject | Single-crystalline | en |
dc.subject | Spin-based devices | en |
dc.title | Single crystalline Ge1.xMnx nanowires as building blocks for nanoelectronics | en |
dc.type | Article (peer-reviewed) | en |
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