Single crystalline Ge1.xMnx nanowires as building blocks for nanoelectronics

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dc.contributor.authorvan der Meulen, Machteld I.
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorMorris, Michael A.
dc.contributor.authorKazakova, Olga
dc.contributor.authorHan, Xinhai
dc.contributor.authorWang, Kang L.
dc.contributor.authorJacob, Ajey P.
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderUniversity of California, Los Angelesen
dc.date.accessioned2019-07-12T14:37:59Z
dc.date.available2019-07-12T14:37:59Z
dc.date.issued2008-11-25
dc.date.updated2019-06-28T15:46:11Z
dc.description.abstractMagnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5−1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.en
dc.description.sponsorshipUniversity of California, Los Angeles (UCLA, Western Institute of Nanoelectronics (WIN))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationvan der Meulen, M. I., Petkov, N., Morris, M. A., Kazakova, O., Han, X., Wang, K. L., Jacob, A. P. and Holmes, J. D. (2009) 'Single Crystalline Ge1-xMnx Nanowires as Building Blocks for Nanoelectronics', Nano Letters, 9(1), pp. 50-56. doi: 10.1021/nl802114xen
dc.identifier.doi10.1021/nl802114xen
dc.identifier.endpage56en
dc.identifier.issn1530-6984
dc.identifier.issued1en
dc.identifier.journaltitleNano Lettersen
dc.identifier.startpage50en
dc.identifier.urihttps://hdl.handle.net/10468/8158
dc.identifier.volume9en
dc.language.isoenen
dc.publisherAmerican Chemical Society, ACSen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Frontiers Programme (RFP)/07/RFP/MASF710/IE/Nanocable Arrays for Future Electronics/en
dc.relation.urihttps://pubs.acs.org/doi/abs/10.1021/nl802114x
dc.rights© 2009 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/nl802114xen
dc.subjectManganeseen
dc.subjectCrystalline materialsen
dc.subjectDoping (additives)en
dc.subjectEffluent treatmenten
dc.subjectElectric wireen
dc.subjectGermaniumen
dc.subjectHole concentrationen
dc.subjectHole mobilityen
dc.subjectManganese compoundsen
dc.subjectNanowiresen
dc.subjectSupercritical fluidsen
dc.subjectBuilding blocksen
dc.subjectElectronic devicesen
dc.subjectMn-dopeden
dc.subjectMn-dopingen
dc.subjectPotential applicationsen
dc.subjectSi and Ge nanowiresen
dc.subjectSingle-crystallineen
dc.subjectSpin-based devicesen
dc.titleSingle crystalline Ge1.xMnx nanowires as building blocks for nanoelectronicsen
dc.typeArticle (peer-reviewed)en
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