Single crystalline Ge1.xMnx nanowires as building blocks for nanoelectronics

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van der Meulen, Machteld I.
Petkov, Nikolay
Morris, Michael A.
Kazakova, Olga
Han, Xinhai
Wang, Kang L.
Jacob, Ajey P.
Holmes, Justin D.
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American Chemical Society, ACS
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Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5−1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.
Manganese , Crystalline materials , Doping (additives) , Effluent treatment , Electric wire , Germanium , Hole concentration , Hole mobility , Manganese compounds , Nanowires , Supercritical fluids , Building blocks , Electronic devices , Mn-doped , Mn-doping , Potential applications , Si and Ge nanowires , Single-crystalline , Spin-based devices
van der Meulen, M. I., Petkov, N., Morris, M. A., Kazakova, O., Han, X., Wang, K. L., Jacob, A. P. and Holmes, J. D. (2009) 'Single Crystalline Ge1-xMnx Nanowires as Building Blocks for Nanoelectronics', Nano Letters, 9(1), pp. 50-56. doi: 10.1021/nl802114x
© 2009 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see