Single crystalline Ge1.xMnx nanowires as building blocks for nanoelectronics
van der Meulen, Machteld I.
Morris, Michael A.
Wang, Kang L.
Jacob, Ajey P.
Holmes, Justin D.
American Chemical Society, ACS
Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5−1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.
Manganese , Crystalline materials , Doping (additives) , Effluent treatment , Electric wire , Germanium , Hole concentration , Hole mobility , Manganese compounds , Nanowires , Supercritical fluids , Building blocks , Electronic devices , Mn-doped , Mn-doping , Potential applications , Si and Ge nanowires , Single-crystalline , Spin-based devices
van der Meulen, M. I., Petkov, N., Morris, M. A., Kazakova, O., Han, X., Wang, K. L., Jacob, A. P. and Holmes, J. D. (2009) 'Single Crystalline Ge1-xMnx Nanowires as Building Blocks for Nanoelectronics', Nano Letters, 9(1), pp. 50-56. doi: 10.1021/nl802114x
© 2009 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/nl802114x