Single crystalline Ge1.xMnx nanowires as building blocks for nanoelectronics

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dc.contributor.author van der Meulen, Machteld I.
dc.contributor.author Petkov, Nikolay
dc.contributor.author Morris, Michael A.
dc.contributor.author Kazakova, Olga
dc.contributor.author Han, Xinhai
dc.contributor.author Wang, Kang L.
dc.contributor.author Jacob, Ajey P.
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2019-07-12T14:37:59Z
dc.date.available 2019-07-12T14:37:59Z
dc.date.issued 2008-11-25
dc.identifier.citation van der Meulen, M. I., Petkov, N., Morris, M. A., Kazakova, O., Han, X., Wang, K. L., Jacob, A. P. and Holmes, J. D. (2009) 'Single Crystalline Ge1-xMnx Nanowires as Building Blocks for Nanoelectronics', Nano Letters, 9(1), pp. 50-56. doi: 10.1021/nl802114x en
dc.identifier.volume 9 en
dc.identifier.issued 1 en
dc.identifier.startpage 50 en
dc.identifier.endpage 56 en
dc.identifier.issn 1530-6984
dc.identifier.uri http://hdl.handle.net/10468/8158
dc.identifier.doi 10.1021/nl802114x en
dc.description.abstract Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5−1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices. en
dc.description.sponsorship University of California, Los Angeles (UCLA, Western Institute of Nanoelectronics (WIN)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society, ACS en
dc.relation.uri https://pubs.acs.org/doi/abs/10.1021/nl802114x
dc.rights © 2009 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/nl802114x en
dc.subject Manganese en
dc.subject Crystalline materials en
dc.subject Doping (additives) en
dc.subject Effluent treatment en
dc.subject Electric wire en
dc.subject Germanium en
dc.subject Hole concentration en
dc.subject Hole mobility en
dc.subject Manganese compounds en
dc.subject Nanowires en
dc.subject Supercritical fluids en
dc.subject Building blocks en
dc.subject Electronic devices en
dc.subject Mn-doped en
dc.subject Mn-doping en
dc.subject Potential applications en
dc.subject Si and Ge nanowires en
dc.subject Single-crystalline en
dc.subject Spin-based devices en
dc.title Single crystalline Ge1.xMnx nanowires as building blocks for nanoelectronics en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2019-06-28T15:46:11Z
dc.description.version Accepted Version en
dc.internal.rssid 17688942
dc.contributor.funder Irish Research Council for Science, Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder University of California, Los Angeles en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nano Letters en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Frontiers Programme (RFP)/07/RFP/MASF710/IE/Nanocable Arrays for Future Electronics/ en


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