Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

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dc.contributor.author Chikoidze, Ekaterine
dc.contributor.author Sartel, Corinne
dc.contributor.author Mohamed, Hagar
dc.contributor.author Tchelidze, Tamar
dc.contributor.author Modreanu, Mircea
dc.contributor.author Vales-Castro, Carlo
dc.contributor.author Rubio, Carles
dc.contributor.author Arnold, Christophe
dc.contributor.author Sallet, Vincent
dc.contributor.author Dumont, Yves
dc.contributor.author Perez-Tomas, Amador
dc.date.accessioned 2019-07-24T10:23:44Z
dc.date.available 2019-07-24T10:23:44Z
dc.date.issued 2019-07-15
dc.identifier.citation Chikoidze, E., Sartel, C., Mohamed, H., Tchelidze, T., Modreanu, M., Vales-Castro, C., Rubio, C., Arnold, C., Sallet, V., Dumont, Y. and Perez-Tomas, A. (2019) 'Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor', Journal of Materials Chemistry C. doi: 10.1039/C9TC02910A en
dc.identifier.issn 2050-7526
dc.identifier.uri http://hdl.handle.net/10468/8245
dc.identifier.doi 10.1039/C9TC02910A en
dc.description.abstract While there are several n-type transparent semiconductor oxides (TSO) for optoelectronic applications (e.g. LEDs, solar cells or display TFTs), their required p-type counterparts oxides are known to be more challenging. For the time being, the n-type TSO with the largest bandgap (~5eV) is Ga2O3 that holds the promisse of extending the light transparency further into the deep ultraviolet. In this work, it is demonstrated that strongly compensated Ga2O3 is also the intrinsic (or native) p-type TSO with the largest bandgap for any reported p-type TSO (e.g. NiO, SnO, delafossites, oxychalcogenides). The achievement of hole mobility in excess of 10 cm2/Vs and (high temperature) free hole concentrations in the ~1017 cm-3 range challenges the current thinking about achieving p-type conductivity in Ga2O3 being “out of question”. The results presented in this paper therefore further clarify that p-type Ga2O3 is possible, although more research must be conducted to determine what are the real Ga2O3 prospects for solar blind bipolar optoelectronics and ultra-high power electronics based in p-n homojunctions. en
dc.description.sponsorship Ministry of Higher Education, Egypt (Cultural Affairs and Missions Sector Fellowship); European Regional Development Fund (Contract ENE2015-74275-JIN); Generalitat de Catalunya (CERCA programme); Agencia Estatal de Investigación (Grant No. SEV-2017-0706) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Royal Society of Chemistry en
dc.rights © 2019, the Authors. Publication rights licensed to the Royal Society of Chemistry. All rights reserved. en
dc.subject p-type Ga2O3 en
dc.subject Solar blind bipolar optoelectronics en
dc.subject Ultra-high power electronics en
dc.subject p-n homojunctions en
dc.title Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Mircea Gabriel Modreanu, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: mircea.modreanu@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2020-07-15
dc.date.updated 2019-07-24T08:33:12Z
dc.description.version Accepted Version en
dc.internal.rssid 494022192
dc.contributor.funder Ministry of Higher Education, Egypt en
dc.contributor.funder Agencia Estatal de Investigación en
dc.contributor.funder European Regional Development Fund en
dc.contributor.funder Generalitat de Catalunya en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Materials Chemistry C en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress mircea.modreanu@tyndall.ie en
dc.internal.bibliocheck In press. Check vol / issue / page range. Amend citation as necessary. en

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