Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates

Show simple item record Tang, Fengzai Zhu, Tongtong Fu, Wai-Yuan Oehler, Fabrice Zhang, Siyuan Griffiths, James T. Humphreys, Colin Martin, Tomas L. Bagot, Paul A. J. Moody, Michael P. Patra, Saroj K. Schulz, Stefan Dawson, Philip Church, Stephen Jacobs, Janet Oliver, Rachel A. 2019-08-29T14:54:04Z 2019-08-29T14:54:04Z 2019-06-11
dc.identifier.citation Tang, F., Zhu, T., Fu, W.-Y., Oehler, F., Zhang, S., Griffiths, J. T., Humphreys, C., Martin, T. L., Bagot, P. A. J., Moody, M. P., Patra, S. K., Schulz, S., Dawson, P., Church, S., Jacobs, J. and Oliver, R. A. (2019) 'Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates', Journal of Applied Physics, 125(22), 225704, (13 pp). doi: 10.1063/1.5097411 en
dc.identifier.volume 125 en
dc.identifier.issued 22 en
dc.identifier.startpage 1 en
dc.identifier.endpage 13 en
dc.identifier.issn 0021-8979
dc.identifier.doi 10.1063/1.5097411 en
dc.description.abstract We investigate the atomic scale structure of m-plane InGaN quantum wells grown on bulk m-plane GaN templates and reveal that as the indium content increases there is an increased tendency for nonrandom clustering of indium atoms to occur. Based on the atom probe tomography data used to reveal this clustering, we develop a k · p model that takes these features into account and links the observed nanostructure to the optical properties of the quantum wells. The calculations show that electrons and holes tend to colocalize at indium clusters. The transition energies between the electron and hole states are strongly affected by the shape and size of the clusters. Hence, clustering contributes to the very large line widths observed in the experimental low temperature photoluminescence spectra. Also, the emission from m-plane InGaN quantum wells is strongly linearly polarized. Clustering does not alter the theoretically predicted polarization properties, even when the shape of the cluster is strongly asymmetric. Overall, however, we show that the presence of clustering does impact the optical properties, illustrating the importance of careful characterization of the nanoscale structure of m-plane InGaN quantum wells and that atom probe tomography is a useful and important tool to address this problem. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2019 Author(s). Published under license by AIP Publishing. en
dc.subject Nanostructures en
dc.subject Optical properties en
dc.subject Quantum wells en
dc.subject Semiconductors en
dc.subject Semiconductor quantum wells en
dc.subject Atoms en
dc.subject Gallium nitride en
dc.subject III-V semiconductors en
dc.subject Indium en
dc.subject Nanotechnology en
dc.subject Optical properties en
dc.subject Photoluminescence en
dc.subject Polarization en
dc.subject Probes en
dc.subject Semiconductor alloys en
dc.subject Temperature en
dc.title Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stefan Schulz, Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en Access to this article is restricted until 12 months after publication by request of the publisher. en 2020-06-11 2019-08-29T14:19:33Z
dc.description.version Accepted Version en
dc.internal.rssid 498427340
dc.contributor.funder European Research Council en
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Engineering and Physical Sciences Research Council en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.identifier.articleid 225704 en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP2::ERC/279361/EU/A multi-microscopy approach to the characterisation of Nitride semiconductors (MACONS)/MACONS en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/ en
dc.relation.project info:eu-repo/grantAgreement/RCUK/EPSRC/EP/H047816/1/GB/Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities/ en
dc.relation.project info:eu-repo/grantAgreement/RCUK/EPSRC/EP/J001627/1/GB/Study of semi-polar and non-polar nitride based structures for opto-electronic device applications/ en
dc.identifier.eissn 1089-7550

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