AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

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© 2019, The Japan Society of Applied Physics. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to. Except where otherwise noted, this item's license is described as © 2019, The Japan Society of Applied Physics. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to.
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