Full text restriction information:Access to this article is restricted until 12 months after publication by request of the publisher.
Restriction lift date:2020-09-26
Citation:Dragoman, M., Modreanu, M., Povey, I. M., Dinescu, A. and Dragoman, D. (2019) 'Reconfigurable horizontal-vertical carrier transport in graphene/HfZrO field-effect transistors', Nanotechnology. doi: 10.1088/1361-6528/ab4832
We have fabricated at wafer level field-effect-transistors (FETs) having as channel graphene monolayers transferred on a HfZrO ferroelectric, grown by atomic layer deposition on a doped Si (100) substrate. These FETs display either horizontal or vertical carrier transport behavior, depending on the applied gate polarity. In one polarity, the FETs behave as a graphene FET where the transport is horizontal between two contacts (drain and grounded source) and is modulated by a back-gate. Changing the polarity, the transport is vertical between the drain and the back-gate and, irrespective of the metallic contact type, Ti/Au or Cr/Au, the source-drain bias modulates the height of the potential barrier between HfZrO and the doped Si substrate, the carrier transport being described by a Schottky mechanism at high gate voltages and by a space-charge limited mechanism low gate voltages. Vertical transport is required by three-dimensional integration technologies for increasing the density of transistors on chip.
This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement