Reconfigurable horizontal-vertical carrier transport in graphene/HfZrO field-effect transistors
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Date
2019-09-26
Authors
Dragoman, Mircea
Modreanu, Mircea
Povey, Ian M.
Dinescu, Adrian
Dragoman, Daniela
Journal Title
Journal ISSN
Volume Title
Publisher
IOP Publishing
Published Version
Abstract
We have fabricated at wafer level field-effect-transistors (FETs) having as channel graphene monolayers transferred on a HfZrO ferroelectric, grown by atomic layer deposition on a doped Si (100) substrate. These FETs display either horizontal or vertical carrier transport behavior, depending on the applied gate polarity. In one polarity, the FETs behave as a graphene FET where the transport is horizontal between two contacts (drain and grounded source) and is modulated by a back-gate. Changing the polarity, the transport is vertical between the drain and the back-gate and, irrespective of the metallic contact type, Ti/Au or Cr/Au, the source-drain bias modulates the height of the potential barrier between HfZrO and the doped Si substrate, the carrier transport being described by a Schottky mechanism at high gate voltages and by a space-charge limited mechanism low gate voltages. Vertical transport is required by three-dimensional integration technologies for increasing the density of transistors on chip.
Description
Keywords
Field-effect-transistor , FET , Graphene , Vertical transport , Polarity
Citation
Dragoman, M., Modreanu, M., Povey, I. M., Dinescu, A. and Dragoman, D. (2019) 'Reconfigurable horizontal-vertical carrier transport in graphene/HfZrO field-effect transistors', Nanotechnology. doi: 10.1088/1361-6528/ab4832