Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

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dc.contributor.author Presa, Silvino
dc.contributor.author Maaskant, Pleun P.
dc.contributor.author Kappers, M. J.
dc.contributor.author Humphreys, C. J.
dc.contributor.author Corbett, Brian
dc.date.accessioned 2019-11-01T07:33:54Z
dc.date.available 2019-11-01T07:33:54Z
dc.date.issued 2016-07-14
dc.identifier.citation Presa, S., Maaskant, P. P., Kappers, M. J., Humphreys, C. J. and Corbett, B. (2016) 'Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes', AIP Advances, 6(7), 075108. (13pp.) DOI: 10.1063/1.4959100 en
dc.identifier.volume 6 en
dc.identifier.issued 7 en
dc.identifier.startpage 1 en
dc.identifier.endpage 13 en
dc.identifier.uri http://hdl.handle.net/10468/8934
dc.identifier.doi 10.1063/1.4959100 en
dc.description.abstract We present a comprehensive study of the emission spectra and electrical characteristics of InGaN/GaN multi-quantum well light-emitting diode (LED) structures under resonant optical pumping and varying electrical bias. A 5 quantum well LED with a thin well (1.5 nm) and a relatively thick barrier (6.6 nm) shows strong bias-dependent properties in the emission spectra, poor photovoltaic carrier escape under forward bias and an increase in effective resistance when compared with a 10 quantum well LED with a thin (4 nm) barrier. These properties are due to a strong piezoelectric field in the well and associated reduced field in the thicker barrier. We compare the voltage ideality factors for the LEDs under electrical injection, light emission with current, photovoltaic mode (PV) and photoluminescence (PL) emission. The PV and PL methods provide similar values for the ideality which are lower than for the resistance-limited electrical method. Under optical pumping the presence of an n-type InGaN underlayer in a commercial LED sample is shown to act as a second photovoltaic source reducing the photovoltage and the extracted ideality factor to less than 1. The use of photovoltaic measurements together with bias-dependent spectrally resolved luminescence is a powerful method to provide valuable insights into the dynamics of GaN LEDs. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri https://aip.scitation.org/doi/10.1063/1.4959100
dc.rights ©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). en
dc.rights.uri http://creativecommons.org/licenses/by/4.0/ en
dc.subject Electrical conductivity en
dc.subject Electrical resistivity en
dc.subject Gallium compounds en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject Light emitting diodes en
dc.subject Optical pumping en
dc.subject Photoluminescence en
dc.subject Photovoltaic effects en
dc.subject Piezoelectric devices en
dc.subject Piezoelectric semiconductors en
dc.subject Piezoelectricity en
dc.subject Quant en
dc.title Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Silvino Presa, School of Engineering and Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email:silvino.presa@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle AIP Advances en
dc.internal.IRISemailaddress silvino.presa@tyndall.ie en
dc.identifier.articleid 075108 en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHT en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/ en
dc.identifier.eissn 2158-3226


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©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Except where otherwise noted, this item's license is described as ©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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