Exploring the potential of c-plane indium gallium nitride quantum dots for twin-photon emission

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dc.contributor.author Patra, Saroj K.
dc.contributor.author Schulz, Stefan
dc.date.accessioned 2020-01-16T10:09:00Z
dc.date.available 2020-01-16T10:09:00Z
dc.date.issued 2019-11-25
dc.identifier.citation Patra, S. K. and Schulz, S. (2020) 'Exploring the potential of c-plane indium gallium nitride quantum dots for twin-photon emission', Nano Letters, 20(1), pp. 234-241. doi: 10.1021/acs.nanolett.9b03740 en
dc.identifier.volume 20 en
dc.identifier.issued 1 en
dc.identifier.startpage 234 en
dc.identifier.endpage 241 en
dc.identifier.issn 1530-6984
dc.identifier.uri http://hdl.handle.net/10468/9521
dc.identifier.doi 10.1021/acs.nanolett.9b03740 en
dc.description.abstract Nonclassical light emission, such as entangled and single-photon emission, has attracted significant interest because of its importance in future quantum technology applications. In this work, we study the potential of wurtzite (In,Ga)N/GaN quantum dots for novel nonclassical light emission, namely, twin-photon emission. Our calculations, based on a fully atomistic many-body framework, reveal that the combination of carrier localization due to random alloy fluctuations in the dot, spinâ orbit coupling effects, underlying wurtzite crystal structure, and built-in electric fields leads to an excitonic fine structure that is very different from that of more â conventionalâ zinc-blende (In,Ga)As dots, which have been used so far for twin photon emission. We show and discuss here that the four energetically lowest exciton states are all bright and emit linearly polarized light. Furthermore, three of these excitonic states are basically degenerate. All of these results are independent of the alloy microstructure. Also, our calculations reveal large exciton binding energies (>35 meV), which exceed the thermal energy at room temperature. Therefore, (In,Ga)N/GaN dots are very promising candidates for achieving efficient twin photon emission, potentially at high temperatures and over a wide emission wavelength range. en
dc.description.sponsorship Science Foundation Ireland (17/CDA/4789) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society en
dc.relation.uri https://doi.org/10.1021/acs.nanolett.9b03740
dc.rights © 2019, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, © American Chemical Society, after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.9b03740 en
dc.subject Excitonic fine structure en
dc.subject Quantum dots en
dc.subject Twin-photon emission en
dc.subject InGaN en
dc.title Exploring the potential of c-plane indium gallium nitride quantum dots for twin-photon emission en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stefan Schulz, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: stefan.schulz@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 18 months after publication by request of the publisher. en
dc.check.date 2020-11-25
dc.date.updated 2020-01-16T09:42:12Z
dc.description.version Accepted Version en
dc.internal.rssid 500174892
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nano Letters en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress stefan.schulz@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/ en
dc.identifier.eissn 1530-6992

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