Access to this article is restricted until 12 months after publication by request of the publisher.. Restriction lift date: 2021-01-13
Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD
Loading...
Files
Published Version
Date
2020-01-13
Authors
Zubialevich, Vitaly Z.
McLaren, Mathew
Pampili, Pietro
Shen, John
Arredondo-Arechavala, Miryam
Parbrook, Peter J.
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Reduction of threading dislocation density in top-down fabricated GaN nanocolumns (NCs) via their successive lateral shrinkage by anisotropic wet etch and lateral overgrowth by metalorganic chemical vapor deposition is studied by transmission electron microscopy. The fabrication process involves a combination of dry and wet etches to produce NC arrays of a low fill factor (<5%), which are then annealed and laterally overgrown to increase the array fill factor to around 20%–30%. The resulting NC arrays show a reduction in threading dislocation density of at least 25 times, allowing for the reduction in material volume due to the array fill factor, with dislocations being observed to bend into the voids between NCs during the overgrowth process.
Description
Keywords
Threading dislocation density , Successive lateral shrinkage , Anisotropic wet etch , Lateral overgrowth , Metalorganic chemical vapor deposition , Transmission electron microscopy , Top-down fabricated GaN nanocolumns , NC
Citation
Zubialevich, V. Z., McLaren, M., Pampili, P., Shen, J., Arredondo-Arechavala, M. and Parbrook, P. J. (2020) 'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD', Journal of Applied Physics, 127(2), 25306 (7pp). doi: 10.1063/1.5110602
Link to publisher’s version
Copyright
© 2020, the Authors. Published under license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and AIP Publishing. This article appeared as Zubialevich, V. Z., McLaren, M., Pampili, P., Shen, J., Arredondo-Arechavala, M. and Parbrook, P. J. (2020) 'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD', Journal of Applied Physics, 127(2), 25306 (7pp), doi: 10.1063/1.5110602and may be found at https://aip.scitation.org/doi/full/10.1063/1.5110602