Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors
| dc.contributor.author | Monaghan, Scott | |
| dc.contributor.author | O'Connor, Éamon | |
| dc.contributor.author | Povey, Ian M. | |
| dc.contributor.author | Sheehan, Brendan J. | |
| dc.contributor.author | Cherkaoui, Karim | |
| dc.contributor.author | Hutchinson, Barry J. A. | |
| dc.contributor.author | Hurley, Paul K. | |
| dc.contributor.author | Ferdousi, Fahmida | |
| dc.contributor.author | Rios, Rafael | |
| dc.contributor.author | Kuhn, Kelin J. | |
| dc.contributor.author | Rahman, Anisur | |
| dc.contributor.funder | Science Foundation Ireland | en |
| dc.date.accessioned | 2016-08-30T11:56:50Z | |
| dc.date.available | 2016-08-30T11:56:50Z | |
| dc.date.issued | 2013-01-09 | |
| dc.date.updated | 2013-03-01T11:43:16Z | |
| dc.description.abstract | This work looks at the effect on mid-gap interface state defect density estimates for In0.53Ga0.47As semiconductor capacitors when different AC voltage amplitudes are selected for a fixed voltage bias step size (100 mV) during room temperature only electrical characterization. Results are presented for Au/Ni/Al2O3/In0.53Ga0.47As/InP metal–oxide–semiconductor capacitors with (1) n-type and p-type semiconductors, (2) different Al2O3 thicknesses, (3) different In0.53Ga0.47As surface passivation concentrations of ammonium sulphide, and (4) different transfer times to the atomic layer deposition chamber after passivation treatment on the semiconductor surface—thereby demonstrating a cross-section of device characteristics. The authors set out to determine the importance of the AC voltage amplitude selection on the interface state defect density extractions and whether this selection has a combined effect with the oxide capacitance. These capacitors are prototypical of the type of gate oxide material stacks that could form equivalent metal–oxide–semiconductor field-effect transistors beyond the 32 nm technology node. The authors do not attempt to achieve the best scaled equivalent oxide thickness in this work, as our focus is on accurately extracting device properties that will allow the investigation and reduction of interface state defect densities at the high-k/III–V semiconductor interface. The operating voltage for future devices will be reduced, potentially leading to an associated reduction in the AC voltage amplitude, which will force a decrease in the signal-to-noise ratio of electrical responses and could therefore result in less accurate impedance measurements. A concern thus arises regarding the accuracy of the electrical property extractions using such impedance measurements for future devices, particularly in relation to the mid-gap interface state defect density estimated from the conductance method and from the combined high–low frequency capacitance–voltage method. The authors apply a fixed voltage step of 100 mV for all voltage sweep measurements at each AC frequency. Each of these measurements is repeated 15 times for the equidistant AC voltage amplitudes between 10 mV and 150 mV. This provides the desired AC voltage amplitude to step size ratios from 1:10 to 3:2. Our results indicate that, although the selection of the oxide capacitance is important both to the success and accuracy of the extraction method, the mid-gap interface state defect density extractions are not overly sensitive to the AC voltage amplitude employed regardless of what oxide capacitance is used in the extractions, particularly in the range from 50% below the voltage sweep step size to 50% above it. Therefore, the use of larger AC voltage amplitudes in this range to achieve a better signal-to-noise ratio during impedance measurements for future low operating voltage devices will not distort the extracted interface state defect density. | en |
| dc.description.sponsorship | Science Foundation Ireland (INVENT project Grant No. SFI/09/IN.1/I2633); Intel Ireland Ltd. (E. Nagle, Intel Components Research, Intel Ireland Ltd.) | en |
| dc.description.status | Peer reviewed | en |
| dc.description.version | Published Version | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | MONAGHAN, S., APOS, CONNOR, É., POVEY, I. M., SHEEHAN, B. J., CHERKAOUI, K., HUTCHINSON, B. J. A., HURLEY, P. K., FERDOUSI, F., RIOS, R., KUHN, K. J. & RAHMAN, A. 2013. Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors. Journal of Vacuum Science & Technology B, 31, 01A119. doi: 10.1116/1.4774109 | en |
| dc.identifier.doi | 10.1116/1.4774109 | |
| dc.identifier.endpage | 01A119-8 | en |
| dc.identifier.issn | 2166-2746 | |
| dc.identifier.issn | 2166-2754 | |
| dc.identifier.issued | 1 | en |
| dc.identifier.journaltitle | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | en |
| dc.identifier.startpage | 01A119-1 | en |
| dc.identifier.uri | https://hdl.handle.net/10468/3038 | |
| dc.identifier.volume | 31 | en |
| dc.language.iso | en | en |
| dc.publisher | AIP Publishing, American Vacuum Society | en |
| dc.relation.uri | http://scitation.aip.org/content/avs/journal/jvstb/31/1/10.1116/1.4774109 | |
| dc.rights | © 2013 American Vacuum Society, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Vacuum Science & Technology B, 31, 01A119. and may be found at http://scitation.aip.org/content/avs/journal/jvstb/31/1/10.1116/1.4774109 | en |
| dc.subject | Capacitance | en |
| dc.subject | Electric measurements | en |
| dc.subject | Semiconductors | en |
| dc.subject | Gold | en |
| dc.subject | Alternating current power transmission | en |
| dc.title | Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors | en |
| dc.type | Article (peer-reviewed) | en |
