Atomically flat low-resistive germanide contacts formed by laser thermal anneal

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dc.contributor.authorShayesteh, Maryam
dc.contributor.authorHuet, Karim
dc.contributor.authorToqué-Tresonne, Inès
dc.contributor.authorNegru, Razvan
dc.contributor.authorDaunt, Chris L. M.
dc.contributor.authorKelly, Niall
dc.contributor.authorO'Connell, Dan
dc.contributor.authorYu, Ran
dc.contributor.authorDjara, Vladimir
dc.contributor.authorCarolan, Patrick B.
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorDuffy, Ray
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2019-08-06T11:52:11Z
dc.date.available2019-08-06T11:52:11Z
dc.date.issued2013-06-12
dc.date.updated2019-08-06T11:40:51Z
dc.description.abstractIn this paper, state-of-the-art laser thermal annealing is used to form germanide contacts on n-doped Ge and is systematically compared with results generated by conventional rapid thermal annealing. Surface topography, interface quality, crystal structure, and material stoichiometry are explored for both annealing techniques. For electrical characterization, specific contact resistivity and thermal stability are extracted. It is shown that laser thermal annealing can produce a uniform contact with a remarkably smooth substrate interface with specific contact resistivity two to three orders of magnitude lower than the equivalent rapid thermal annealing case. It is shown that a specific contact resistivity of 2.84 × 10 -7 Ω·cm 2 is achieved for optimized laser thermal anneal energy density conditions.en
dc.description.sponsorshipHigher Education Authority (Programme for Research in Third-Level Institutions)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationShayesteh, M., Huet, K., Toqué-Tresonne, I., Negru, R., Daunt, C. L. M., Kelly, N., O'Connell, D., Yu, R., Djara, Vl., Carolan, P. B., Petkov, N. and Duffy, R. (2013) 'Atomically flat low-resistive germanide contacts formed by laser thermal anneal', IEEE Transactions on Electron Devices, 60(7), pp. 2178-2185. doi: 10.1109/TED.2013.2263336en
dc.identifier.doi10.1109/TED.2013.2263336en
dc.identifier.eissn1557-9646
dc.identifier.endpage2185en
dc.identifier.issn0018-9383
dc.identifier.issued7en
dc.identifier.journaltitleIEEE Transactions on Electron Devicesen
dc.identifier.startpage2178en
dc.identifier.urihttps://hdl.handle.net/10468/8283
dc.identifier.volume60en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1623/IE/N-type doping in germanium for sub-20nm technology CMOS devices/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1621/IE/Tuning surface and dopant properties of silicon and germanium nanowires for high performance nanowire-based field-effect transistors/en
dc.relation.urihttps://ieeexplore.ieee.org/abstract/document/6530663
dc.rights© 2013, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectElectrical contactsen
dc.subjectLaser beam annealingen
dc.subjectFlat low resistive germanide contactsen
dc.subjectLaser thermal annealingen
dc.subjectRapid thermal annealingen
dc.subjectSurface topographyen
dc.subjectInterface qualityen
dc.subjectCrystal structureen
dc.subjectMaterial stoichiometryen
dc.subjectAnnealing techniqueen
dc.subjectElectrical characterizationen
dc.subjectThermal stabilityen
dc.subjectSmooth substrate interfaceen
dc.subjectSpecific contact resistivityen
dc.subjectNickelen
dc.subjectSubstratesen
dc.subjectLasersen
dc.subjectContactsen
dc.subjectSurface treatmenten
dc.subjectContact resistanceen
dc.subjectGermaniumen
dc.subjectSheet resistanceen
dc.subjectTransfer length methoden
dc.subjectTLMen
dc.subjectOptimized laser thermal anneal energy density conditionsen
dc.titleAtomically flat low-resistive germanide contacts formed by laser thermal annealen
dc.typeArticle (peer-reviewed)en
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