Atomically flat low-resistive germanide contacts formed by laser thermal anneal

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Shayesteh, Maryam
Huet, Karim
Toqué-Tresonne, Inès
Negru, Razvan
Daunt, Chris L. M.
Kelly, Niall
O'Connell, Dan
Yu, Ran
Djara, Vladimir
Carolan, Patrick B.
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In this paper, state-of-the-art laser thermal annealing is used to form germanide contacts on n-doped Ge and is systematically compared with results generated by conventional rapid thermal annealing. Surface topography, interface quality, crystal structure, and material stoichiometry are explored for both annealing techniques. For electrical characterization, specific contact resistivity and thermal stability are extracted. It is shown that laser thermal annealing can produce a uniform contact with a remarkably smooth substrate interface with specific contact resistivity two to three orders of magnitude lower than the equivalent rapid thermal annealing case. It is shown that a specific contact resistivity of 2.84 × 10 -7 Ω·cm 2 is achieved for optimized laser thermal anneal energy density conditions.
Electrical contacts , Laser beam annealing , Flat low resistive germanide contacts , Laser thermal annealing , Rapid thermal annealing , Surface topography , Interface quality , Crystal structure , Material stoichiometry , Annealing technique , Electrical characterization , Thermal stability , Smooth substrate interface , Specific contact resistivity , Nickel , Substrates , Lasers , Contacts , Surface treatment , Contact resistance , Germanium , Sheet resistance , Transfer length method , TLM , Optimized laser thermal anneal energy density conditions
Shayesteh, M., Huet, K., Toqué-Tresonne, I., Negru, R., Daunt, C. L. M., Kelly, N., O'Connell, D., Yu, R., Djara, Vl., Carolan, P. B., Petkov, N. and Duffy, R. (2013) 'Atomically flat low-resistive germanide contacts formed by laser thermal anneal', IEEE Transactions on Electron Devices, 60(7), pp. 2178-2185. doi: 10.1109/TED.2013.2263336
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