Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

Simple item page
dc.contributor.authorO'Mahony, Aileen
dc.contributor.authorMonaghan, Scott
dc.contributor.authorProvenzano, G.
dc.contributor.authorPovey, Ian M.
dc.contributor.authorNolan, M. G.
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorNewcomb, Simon B.
dc.contributor.authorCrupi, Felice
dc.contributor.authorHurley, Paul K.
dc.contributor.authorPemble, Martyn E.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.contributor.funderIntel Corporation
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-07-28T11:22:08Z
dc.date.available2017-07-28T11:22:08Z
dc.date.issued2010
dc.description.abstractHigh mobility III-V substrates with high-k oxides are required for device scaling without loss of channel mobility. Interest has focused on the self-cleaning effect on selected III-V substrates during atomic layer deposition of Al2O3. A thin (similar to 1 nm) Al2O3 interface control layer is deposited on In0.53Ga0.47As prior to HfO2 growth, providing the benefit of self-cleaning and improving the interface quality by reducing interface state defect densities by similar to 50% while maintaining scaling trends. Significant reductions in leakage current density and increased breakdown voltage are found, indicative of a band structure improvement due to the reduction/removal of the In0.53Ga0.47As native oxides. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3473773)en
dc.description.sponsorshipEuropean Commission (ERASMUS programme); Science Foundation Ireland (FORME Strategic Research Cluster Grant No. 07/SRC/I1172); Intel Corporation, Intel Ireland (Scholarship)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid52904
dc.identifier.citationO’Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O’Connor, É., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K. and Pemble, M. E. (2010) 'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer', Applied Physics Letters, 97(5), pp. 052904. doi: 10.1063/1.3473773en
dc.identifier.doi10.1063/1.3473773
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued5
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4337
dc.identifier.volume97
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3473773
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O’Connor, É., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K. and Pemble, M. E. (2010) 'Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer', Applied Physics Letters, 97(5), pp. 052904 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3473773en
dc.subjectSiliconen
dc.subjectHfO2en
dc.subjectOzoneen
dc.subjectAtomic layer depositionen
dc.subjectInterface structureen
dc.subjectIII-V semiconductorsen
dc.subjectLeakage currentsen
dc.titleStructural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layeren
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3312.pdf
Size:
868.76 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles