Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

Simple item page
dc.contributor.authorTrager-Cowan, C.
dc.contributor.authorAlasmari, A.
dc.contributor.authorAvis, W.
dc.contributor.authorBruckbauer, J.
dc.contributor.authorEdwards, P. R.
dc.contributor.authorHourahine, B.
dc.contributor.authorKraeusel, S.
dc.contributor.authorKusch, G.
dc.contributor.authorJohnston, R.
dc.contributor.authorNaresh-Kumar, G.
dc.contributor.authorMartin, R. W.
dc.contributor.authorNouf-Allehiani, M.
dc.contributor.authorPascal, E.
dc.contributor.authorSpasevski, L.
dc.contributor.authorThomson, D.
dc.contributor.authorVespucci, S.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorSmith, M. D.
dc.contributor.authorEnslin, J.
dc.contributor.authorMehnke, F.
dc.contributor.authorKneissl, M.
dc.contributor.authorKuhn, C.
dc.contributor.authorWernicke, T.
dc.contributor.authorHagedorn, S.
dc.contributor.authorKnauer, A.
dc.contributor.authorKueller, V.
dc.contributor.authorWalde, S.
dc.contributor.authorWeyers, M.
dc.contributor.authorCoulon, P. M.
dc.contributor.authorShields, P. A.
dc.contributor.authorZhang, Y.
dc.contributor.authorJiu, L.
dc.contributor.authorGong, Y.
dc.contributor.authorSmith, R. M.
dc.contributor.authorWang, T.
dc.contributor.authorWinkelmann, A.
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.contributor.funderTechnische Universität Berlinen
dc.contributor.funderBundesministerium für Bildung und Forschungen
dc.contributor.funderDeutsche Forschungsgemeinschaften
dc.date.accessioned2019-12-05T11:56:57Z
dc.date.available2019-12-05T11:56:57Z
dc.date.issued2019-10-30
dc.description.abstractIn this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTrager-Cowan, C., Alasmari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Hourahine, B., Kraeusel, S., Kusch, G., Johnston, R., Naresh-Kumar, G., Martin, R. W., Nouf-Allehiani, M., Pascal, E., Spasevski, L., Thomson, D., Vespucci, S., Parbrook, P. J., Smith, M. D., Enslin, J., Mehnke, F., Kneissl, M., Kuhn, C., Wernicke, T., Hagedorn, S., Knauer, A., Kueller, V., Walde, S., Weyers, M., Coulon, P. M., Shields, P. A., Zhang, Y., Jiu, L., Gong, Y., Smith, R. M., Wang, T. and Winkelmann, A. (2019) 'Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films', Photonics Research, 7(11), pp. 73-82. doi: 10.1364/PRJ.7.000B73en
dc.identifier.doi10.1364/PRJ.7.000B73en
dc.identifier.eissn2327-9125
dc.identifier.endpage82en
dc.identifier.issued11en
dc.identifier.journaltitlePhotonics Researchen
dc.identifier.startpage73en
dc.identifier.urihttps://hdl.handle.net/10468/9342
dc.identifier.volume7en
dc.language.isoenen
dc.publisherOSA - The Optical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/J015792/1/GB/Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC./en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/M015181/1/GB/Manufacturing of nano-engineered III-nitride semiconductors/en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/P015719/1/GB/Quantitative non-destructive nanoscale characterisation of advanced materials/en
dc.rights© The Author(s) 2019. Published by Chinese Laser Press under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOIen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectElectron microscopyen
dc.subjectUV-emitting nitrideen
dc.subjectSemiconductoren
dc.titleScanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin filmsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
prj-7-11-B73.pdf
Size:
2.07 MB
Format:
Adobe Portable Document Format
Description:
Published version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles