High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications

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dc.contributor.authorGinige, Ravin
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorKwan, V. W.
dc.contributor.authorKelleher, Carmel
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderHigher Education Authority
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-07-12T09:11:17Z
dc.date.available2017-07-12T09:11:17Z
dc.date.issued2004-03
dc.description.abstractThis article analyzes and explains the observed temperature dependence of the forward dark current of lattice matched In0.53Ga0.47As on InP diodes as a function of voltage. The experimental results show, at high temperatures, the characteristic current-voltage (I-V) curve corresponding to leakage, recombination, and diffusion currents, but at low temperatures an additional region is seen at high fields. We show that the onset of this region commences with high injection into the lower-doped base region. The high injection is shown by using simulation software to substantially alter the minority carrier concentration profile in the base, emitter and consequently the quasi-Fermi levels (QFL) at the base/window and the window/cap heterojunctions. We show that this QFL splitting and the associated electron "pile-up" (accumulation) at the window/emitter heterojunction leads to the observed pseudo-n=2 region of the current-voltage curve. We confirm this phenomenon by investigating the I-V-T characteristics of diodes with an InGaAsP quaternary layer (E-g=1 eV) inserted between the InP window (E-g=1.35 eV) and the InGaAs emitter (E-g=0.72 eV) where it serves to reduce the barrier to injected electrons, thereby reducing the "pile-up." We show, in this case that the high injection occurs at a higher voltage and lower temperature than for the ternary device, thereby confirming the role of the "accumulation" in the change of the I-V characteristics from n=1 to pseudo-n=2 in the ternary latticed matched device. This is an important phenomenon for consideration in thermophotovoltaic applications. We, also show that the activation energy at medium and high voltages corresponds to the InP/InGaAs conduction band offset at the window/emitter heterointerface.en
dc.description.sponsorshipHigher Education Authority (HEA-ECOSITE program); European Commisson (European Union project titled ‘‘A Thermophotovoltaic Power Generator for Hybrid Electrical Vehicles ~THE REV!.’)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGinige, R., Cherkaoui, K., Kwan, V. W., Kelleher, C. and Corbett, B. (2004) 'High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications', Journal of Applied Physics, 95(5), pp. 2809-2815. doi: 10.1063/1.1644905en
dc.identifier.doi10.1063/1.1644905
dc.identifier.endpage2815
dc.identifier.issn0021-8979
dc.identifier.issued5
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage2809
dc.identifier.urihttps://hdl.handle.net/10468/4235
dc.identifier.volume95
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1644905
dc.rights© 2004 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Ginige, R., Cherkaoui, K., Kwan, V. W., Kelleher, C. and Corbett, B. (2004) 'High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications', Journal of Applied Physics, 95(5), pp. 2809-2815 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1644905en
dc.subjectHeterojunctionen
dc.subjectModelen
dc.subjectIII-V semiconductorsen
dc.subjectHigh voltage diodesen
dc.subjectHeterojunctionsen
dc.subjectElectrical propertiesen
dc.subjectDiffusionen
dc.titleHigh injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applicationsen
dc.typeArticle (peer-reviewed)en
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