Random telegraph-signal noise in junctionless transistors

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dc.contributor.authorNazarov, Alexei N.
dc.contributor.authorFerain, Isabelle
dc.contributor.authorAkhavan, Nima Dehdashti
dc.contributor.authorRazavi, Pedram
dc.contributor.authorYu, Ran
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderSeventh Framework Programme
dc.contributor.funderHigher Education Authority
dc.date.accessioned2017-07-28T11:04:41Z
dc.date.available2017-07-28T11:04:41Z
dc.date.issued2011
dc.description.abstractRandom telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature. It is shown that the RTN in JL MOSFETs increases significantly when an accumulation layer is formed. The amplitude of RTN is considerably smaller in JL devices than in inversion-mode MOSFET fabricated using similar fabrication parameters. A measurement technique is developed to extract the main parameters of the traps, including the average charge capture and emission time from the traps. (C) 2011 American Institute of Physics. (doi:10.1063/1.3557505)en
dc.description.sponsorshipScience Foundation Ireland (Contract No. 05/IN/I888); Higher Education Authority (Programme for Research in Third-Level Institutions);en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid92111
dc.identifier.citationNazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Random telegraph-signal noise in junctionless transistors', Applied Physics Letters, 98(9), pp. 092111. doi: 10.1063/1.3557505en
dc.identifier.doi10.1063/1.3557505
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued9
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4326
dc.identifier.volume98
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3557505
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Random telegraph-signal noise in junctionless transistors', Applied Physics Letters, 98(9), pp. 092111 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3557505en
dc.subjectMOSFETsen
dc.subjectSiliconen
dc.subjectDopingen
dc.subjectNanowiresen
dc.subjectElectric measurementsen
dc.titleRandom telegraph-signal noise in junctionless transistorsen
dc.typeArticle (peer-reviewed)en
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