Graphene field effect transistor on silicon nitride devices for near-infrared wavelength tuning
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Date
2024
Authors
Vorobev, A. S.
Mendoza-Castro, J. H.
Iadanza, S.
Jastan, S.
Bianco, G. V.
Bruno, G.
D’Orazio, A.
O’Faolain, Liam
Grande, M.
Journal Title
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Volume Title
Publisher
Optica Publishing Group
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Abstract
In this work, we present the Graphene Field Effect Transistor (GFET) on Silicon Nitride waveguides for achieving the wavelength tuning in the Near-Infrared (NIR) range. The obtained Electrolyte-Graphene-Waveguide fabrication and characterization results are demonstrated.
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Keywords
Graphene Field Effect Transistor (GFET) , Silicon Nitride waveguides , Wavelength tuning , Near-Infrared (NIR) range , Electrolyte-Graphene-Waveguide fabrication and characterization
Citation
Vorobev, A. S., Mendoza-Castro, J. H., Iadanza, S., Jastan, S., Bianco, G. V., Bruno, G., D’Orazio, A., O’Faolain, L. and Grande, M. (2024) 'Graphene field effect transistor on silicon nitride devices for near-infrared wavelength tuning', CLEO: Applications and Technology 2024, Charlotte, North Carolina, United States, 5–10 May 2024. Technical Digest Series (Optica Publishing Group, 2024), paper AM2J.2 (2pp). https://doi.org/10.1364/CLEO_AT.2024.AM2J.2
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© 2024, the Authors. Published by Optica Publishing Group.