Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films

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dc.contributor.authorSchüffelgen, Peter
dc.contributor.authorRosenbach, Daniel
dc.contributor.authorNeumann, Elmar
dc.contributor.authorStehno, Martin P.
dc.contributor.authorLanius, Martin
dc.contributor.authorZhao, Jialin
dc.contributor.authorWang, Meng
dc.contributor.authorSheehan, Brendan
dc.contributor.authorSchmidt, Michael
dc.contributor.authorGao, Bo
dc.contributor.authorBrinkman, Alexander
dc.contributor.authorMussler, Gregor
dc.contributor.authorSchäpers, Thomas
dc.contributor.authorGrützmacher, Detlev
dc.contributor.funderHorizon 2020en
dc.contributor.funderDeutsche Forschungsgemeinschaften
dc.contributor.funderHelmholtz Associationen
dc.date.accessioned2021-08-25T09:05:22Z
dc.date.available2021-08-25T09:05:22Z
dc.date.issued2017-03-23
dc.date.updated2021-08-25T08:48:58Z
dc.description.abstractTopological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3–4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al.en
dc.description.sponsorshipDeutsche Forschungsgemeinschaft (SPP1666 “Topological Insulators”); Helmholtz Association (“Virtual Institute for Topological Insulators” (VITI))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationSchüffelgen, P., Rosenbach, D., Neumann, E., Stehno, M. P., Lanius, M., Zhao, J., Wang, M., Sheehan, B., Schmidt, M., Gao, B., Brinkman, A., Mussler, G., Schäpers, T. and Grützmacher, D. (2017) 'Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films', Journal of Crystal Growth, 477, pp. 183-187. doi: 10.1016/j.jcrysgro.2017.03.035en
dc.identifier.doi10.1016/j.jcrysgro.2017.03.035en
dc.identifier.endpage187en
dc.identifier.issn0022-0248
dc.identifier.journaltitleJournal of Crystal Growthen
dc.identifier.startpage183en
dc.identifier.urihttps://hdl.handle.net/10468/11781
dc.identifier.volume477en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENTen
dc.rights© 2017, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectShadow masken
dc.subjectStencil lithographyen
dc.subjectMolecular beam epitaxyen
dc.subjectSuperconductoren
dc.subjectTopological insulatoren
dc.subjectJosephson junctionen
dc.titleStencil lithography of superconducting contacts on MBE-grown topological insulator thin filmsen
dc.typeArticle (peer-reviewed)en
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