A simple electrical test method to isolate viscoelasticity and creep in capacitive microelectromechanical switches
Loading...
Files
Published Version
Date
2014
Authors
Ryan, Cormac
Olszewski, Oskar Zbigniew
Houlihan, Ruth
O'Mahony, Conor
Duane, Russell
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
A bipolar hold-down voltage was used to study mechanical degradation in radio-frequency microelectromechanical capacitive shunt switches. The bipolar signal was used to prevent the occurrence of dielectric charging and to isolate mechanical effects. The characteristics of material stress relaxation and recovery were monitored by recording the change of the pull-in voltage of a device. The creep effect in movable components was saturated by repeated actuation to the pulled-in position, while comparison with a theoretical model confirmed the presence of linear viscoelasticity in the devices. (C) 2014 AIP Publishing LLC.
Description
Keywords
Mems devices , Stress-relaxation , Thin-films , Behavior , Microelectromechanical systems , Viscoelasticity , Creep , Thin film devices , Dielectrics
Citation
Ryan, C., Olszewski, Z., Houlihan, R., O'Mahony, C. and Duane, R. (2014) 'A simple electrical test method to isolate viscoelasticity and creep in capacitive microelectromechanical switches', Applied Physics Letters, 104(6), pp. 061908. doi: 10.1063/1.4865584
Link to publisher’s version
Copyright
© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Ryan, C., Olszewski, Z., Houlihan, R., O'Mahony, C. and Duane, R. (2014) 'A simple electrical test method to isolate viscoelasticity and creep in capacitive microelectromechanical switches', Applied Physics Letters, 104(6), pp. 061908 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4865584