Sub-100 nm Feature Definition Optimization using Cold Cs Beam Exposed Self-Assembled Monolayers on Au

dc.contributor.authorO'Dwyer, Colm
dc.date.accessioned2013-02-28T14:38:59Z
dc.date.available2013-02-28T14:38:59Z
dc.date.copyright2004
dc.date.issued2004-01
dc.date.updated2012-11-30T12:08:29Z
dc.description.abstractThe results of a study into the dependency of SAM coverage, subsequent post-etch pattern definition and minimum feature size on the quality of the Au substrate used in both physical mask and optical mask atomic nanolithographic experiments are presented in this paper. In comparison, sputtered Au substrates yield much smoother surfaces and a higher density of {111} oriented grains than evaporated Au surfaces. Phase imaging with an atomic force microscope shows that the quality and percentage coverage of uniform alkanethiol monolayer adsorption was much greater for sputtered Au surfaces. Exposure of the monolayer with a laser-cooled Cs beam allowed determination of the minimum Cs dose (2 monolayers) to expose the SAM with lateral force microscopy. Suitable wet-etching, with etch rates of 2.2 nm min-1, results in optimized pattern definition. Utilizing these optimizations, features as small as 50 nm were achieved using both a sub-100 nm physical mask and optical standing wave mask.en
dc.description.statusNot peer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO’Dwyer, C. (2004) 'Sub-100 nm Feature Definition Optimization using Cold Cs Beam Exposed Self-Assembled Monolayers on Au', 206th Meeting of the Electrochemical Society: Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications. Hilton Hawaiian Village, Honolulu, Hawaii, 3-8 October. New Jersey: The Electrochemical Society, 13, pp. 411-430.en
dc.identifier.endpage430en
dc.identifier.isbn1-56677-456-X
dc.identifier.journaltitleProc. Electrochem. Soc.en
dc.identifier.startpage411en
dc.identifier.urihttps://hdl.handle.net/10468/1004
dc.identifier.volume13en
dc.language.isoenen
dc.publisherThe Electrochemical Societyen
dc.relation.ispartof206th Meeting of the Electrochemical Society Conference, Honolulu, Hawaii, 3-8 Oct, 2004
dc.relation.urihttp://www.electrochem.org/dl/pv/published/2004/2004.htm
dc.rights© The Electrochemical Society, Inc. 2004. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in O’Dwyer, C. (2004) 'Sub-100 nm Feature Definition Optimization using Cold Cs Beam Exposed Self-Assembled Monolayers on Au', 206th Meeting of the Electrochemical Society: Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications. Honolulu, Hawaii, 3-8 October. New Jersey: The Electrochemical Society, 13, pp. 411-430.en
dc.subjectSAM coverageen
dc.subjectAu substrateen
dc.subjectNanolithographicen
dc.subjectAtomic force microscopeen
dc.subjectAlkanethiol monolayeren
dc.subjectLaser-cooled Cs beamen
dc.subjectWet-etchingen
dc.subject.lcshElectrochemistryen
dc.subject.lcshMaterials scienceen
dc.titleSub-100 nm Feature Definition Optimization using Cold Cs Beam Exposed Self-Assembled Monolayers on Auen
dc.typeConference itemen
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
SUB_100NM_ANL_PAPER.PDF
Size:
1.53 MB
Format:
Adobe Portable Document Format
License bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description: