Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission

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dc.contributor.authorOchalski, Tomasz J.
dc.contributor.authorMorales, Juan S. D.
dc.contributor.authorGandan, Shumithira
dc.contributor.authorHuffaker, Diana L.
dc.contributor.authorKim, Hyunseok
dc.contributor.authorO'Faolain, Liam
dc.contributor.funderDepartment of Agriculture, Food and the Marine, Irelanden
dc.date.accessioned2021-12-03T13:18:58Z
dc.date.available2021-12-03T13:18:58Z
dc.date.issued2019-09-12
dc.date.updated2021-12-03T12:32:54Z
dc.description.abstractIn this work, we experimentally study the carrier and refractive index dynamics of InGaAs nanopillar grown on a Si on insulator (SOI) substrate. The recombination process of the InGaAs NP is characterized with different optical techniques. Temperature dependent photoluminescence (PL) at 0.5mW excitation power is carried out to determine the influence of temperature on carrier dynamics. The radiative recombination lifetime has been studied at 7K from time-resolved photoluminescence (TRPL) experiments at a certain excitation power. The optimal combination of pitch (separation between NPs) and diameter in the growth process of this nanostructure has also been measured. These results will contribute to further optimization of the InGaAs nanolaser for integration of III-V optoelectronics on SOI substrates.en
dc.description.sponsorshipDepartment of Agriculture, Food and the Marine, Ireland (Project reference: 15/F679)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid110812Ben
dc.identifier.citationOchalski, T. J., Morales, J. S. D., Gandan, S., Huffaker, D. L., Kim, H. and O'Faolain, L. (2019) 'Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission', SPIE Nanoscience + Engineering, San Diego, California, United States, 11-15 August. Subramania, G. S. and Foteinopoulou, S. (eds.) Proceedings of SPIE, Volume 11081, Active Photonic Platforms XI, 110812B (5pp). doi: 10.1117/12.2529494en
dc.identifier.doi10.1117/12.2529494en
dc.identifier.eissn1996-756X
dc.identifier.endpage5en
dc.identifier.isbn9781510628564
dc.identifier.isbn9781510628557
dc.identifier.issn0277-786X
dc.identifier.journaltitleProceedings of SPIEen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/12309
dc.identifier.volume11081en
dc.language.isoenen
dc.publisherSociety of Photo-optical Instrumentation Engineers (SPIE)en
dc.relation.ispartofSPIE Nanoscience + Engineering, San Diego, California, United States, 11-15 August 2019
dc.relation.ispartofSubramania, G. S. and Foteinopoulou, S. (eds.) Proceedings of SPIE, Volume 11081, Active Photonic Platforms XI
dc.rights© 2019, Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.subjectIII-V on siliconen
dc.subjectNanolasersen
dc.subjectSOIen
dc.subjectTime resolved photoluminescenceen
dc.titleCarrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emissionen
dc.typeConference itemen
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