Junctionless multigate field-effect transistor

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dc.contributor.authorLee, Chi-Woo
dc.contributor.authorAfzalian, Aryan
dc.contributor.authorAkhavan, Nima Dehdashti
dc.contributor.authorYan, Ran
dc.contributor.authorFerain, Isabelle
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:47:32Z
dc.date.available2017-07-28T11:47:32Z
dc.date.issued2009
dc.description.abstractThis paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and type to the source and drain extension doping. The proposed device is a thin and narrow multigate field-effect transistor, which can be fully depleted and turned off by the gate. Since this device has no junctions, it has simpler fabrication process, less variability, and better electrical properties than classical MOS devices with source and drain PN junctions. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3079411)en
dc.description.sponsorshipScience Foundation Ireland (Grant No. 05/IN/I888)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid53511
dc.identifier.citationLee, C.-W., Afzalian, A., Akhavan, N. D., Yan, R., Ferain, I. and Colinge, J.-P. (2009) 'Junctionless multigate field-effect transistor', Applied Physics Letters, 94(5), pp. 053511. doi: 10.1063/1.3079411en
dc.identifier.doi10.1063/1.3079411
dc.identifier.endpage2
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued5
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4364
dc.identifier.volume94
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3079411
dc.rights© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lee, C.-W., Afzalian, A., Akhavan, N. D., Yan, R., Ferain, I. and Colinge, J.-P. (2009) 'Junctionless multigate field-effect transistor', Applied Physics Letters, 94(5), pp. 053511 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3079411en
dc.subjectAccumulation-modeen
dc.subjectSoi mosfetsen
dc.subjectPerformanceen
dc.subjectGateen
dc.subjectField effect transistorsen
dc.subjectMOSFETen
dc.subjectP-n junctionsen
dc.subjectSemiconductor dopingen
dc.subjectDopingen
dc.subjectMetal insulator semiconductor structuresen
dc.subjectSemiconductor junctionsen
dc.subjectTransistorsen
dc.subjectElectrical propertiesen
dc.titleJunctionless multigate field-effect transistoren
dc.typeArticle (peer-reviewed)en
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