CMOS-Compatible titanium nitride for on-chip plasmonic Schottky photodetectors

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dc.contributor.authorGosciniak, Jacek
dc.contributor.authorAtar, Fatih B.
dc.contributor.authorCorbett, Brian
dc.contributor.authorRasras, Mahmoud
dc.contributor.funderNew York University Abu Dhabien
dc.date.accessioned2019-12-03T10:31:31Z
dc.date.available2019-12-03T10:31:31Z
dc.date.issued2019-10-07
dc.description.abstractHere, we propose a waveguide-integrated plasmonic Schottky photodetector (PD) operating based on an internal photoemission process with a titanium nitride plasmonic material. The theoretically examined structure employs an asymmetric metal–semiconductor–metal waveguide configuration with one of the electrodes being gold and the second being either gold, titanium, or titanium nitride. For the first time, we measured a Schottky barrier height of 0.67 eV for titanium nitride on p-doped silicon, which is very close to the optimal value of 0.697 eV. This barrier height will enable photodetection with a high signal-to-noise ratio when operating at a wavelength of 1550 nm. In addition to the measured optical properties of high absorption losses and reasonably large real part of the permittivity that are desired for this type of PD, titanium nitride is also compatible with easy integration on existing complementary metal–oxide–semiconductor technology. The use of titanium nitride results in a shorter penetration depth of the optical mode into the metal when compared to Ti, which in turn enhances the probability for transmission of hot electrons to the adjacent semiconductor, giving rise to an enhancement in responsivity.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGosciniak, J., Atar, F. B., Corbett, B. and Rasras, M. (2019) 'CMOS-Compatible Titanium Nitride for On-Chip Plasmonic Schottky Photodetectors', ACS Omega, 4(17), pp. 17223-17229. doi: 10.1021/acsomega.9b01705en
dc.identifier.doi10.1021/acsomega.9b01705en
dc.identifier.eissn2470-1343
dc.identifier.endpage17229en
dc.identifier.issued17en
dc.identifier.journaltitleACS Omegaen
dc.identifier.startpage17223en
dc.identifier.urihttps://hdl.handle.net/10468/9292
dc.identifier.volume4en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.rights©2019 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.en
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/en
dc.subjectCMOSen
dc.subjectTitanium Nitrideen
dc.subjectPlasmonicen
dc.subjectOn-chipen
dc.subjectSchottky photodetectorsen
dc.titleCMOS-Compatible titanium nitride for on-chip plasmonic Schottky photodetectorsen
dc.typeArticle (peer-reviewed)en
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