Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy

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2013
Authors
Dimastrodonato, Valeria
Pelucchi, Emanuele
Zestanakis, Panagiotis A.
Vvedensky, Dimitri D.
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AIP Publishing
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Abstract
We present a theoretical model of the formation of self-limited (Al) GaAs quantum wires within V-grooves on GaAs(001) substrates during metalorganic vapor-phase epitaxy. We identify the facet-dependent rates of the kinetic processes responsible for the formation of the self-limiting profile, which is accompanied by Ga segregation along the axis perpendicular to the bottom of the original template, and analyze their interplay with the facet geometry in the transient regime. A reduced model is adopted for the evolution of the patterned profile, as determined by the angle between the different crystallographic planes as a function of the growth conditions. Our results provide a comprehensive phenomenological understanding of the self-ordering mechanism on patterned surfaces which can be harnessed for designing the quantum optical properties of low-dimensional systems. (C) 2013 AIP Publishing LLC.
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Molecular-beam epitaxy , Dot arrays , Growth , Heterostructures
Citation
Dimastrodonato, V., Pelucchi, E., Zestanakis, P. A. and Vvedensky, D. D. (2013) 'Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy', Applied Physics Letters, 103(4), pp. 042103. doi: 10.1063/1.4816415
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© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dimastrodonato, V., Pelucchi, E., Zestanakis, P. A. and Vvedensky, D. D. (2013) 'Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy', Applied Physics Letters, 103(4), pp. 042103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4816415