Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy

dc.contributor.authorDimastrodonato, Valeria
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorZestanakis, Panagiotis A.
dc.contributor.authorVvedensky, Dimitri D.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T09:23:23Z
dc.date.available2017-07-28T09:23:23Z
dc.date.issued2013
dc.description.abstractWe present a theoretical model of the formation of self-limited (Al) GaAs quantum wires within V-grooves on GaAs(001) substrates during metalorganic vapor-phase epitaxy. We identify the facet-dependent rates of the kinetic processes responsible for the formation of the self-limiting profile, which is accompanied by Ga segregation along the axis perpendicular to the bottom of the original template, and analyze their interplay with the facet geometry in the transient regime. A reduced model is adopted for the evolution of the patterned profile, as determined by the angle between the different crystallographic planes as a function of the growth conditions. Our results provide a comprehensive phenomenological understanding of the self-ordering mechanism on patterned surfaces which can be harnessed for designing the quantum optical properties of low-dimensional systems. (C) 2013 AIP Publishing LLC.en
dc.description.sponsorshipScience Foundation Ireland (10/IN.1/I3000)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid42103
dc.identifier.citationDimastrodonato, V., Pelucchi, E., Zestanakis, P. A. and Vvedensky, D. D. (2013) 'Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy', Applied Physics Letters, 103(4), pp. 042103. doi: 10.1063/1.4816415en
dc.identifier.doi10.1063/1.4816415
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued4
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4282
dc.identifier.volume103
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4816415
dc.rights© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dimastrodonato, V., Pelucchi, E., Zestanakis, P. A. and Vvedensky, D. D. (2013) 'Morphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxy', Applied Physics Letters, 103(4), pp. 042103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4816415en
dc.subjectMolecular-beam epitaxyen
dc.subjectDot arraysen
dc.subjectGrowthen
dc.subjectHeterostructuresen
dc.titleMorphological, compositional, and geometrical transients of V-groove quantum wires formed during metalorganic vapor-phase epitaxyen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
3257.pdf
Size:
498.88 KB
Format:
Adobe Portable Document Format
Description:
Published Version