Exciton-phonon coupling in single quantum dots with different barriers
Mereni, Lorenzo O.
Karlsson, K. F.
Holtz, P. O.
The coupling between longitudinal-optical (LO) phonons and neutral excitons in two different kinds of InGaAs pyramidal quantum dots (QDs) embedded in either AlGaAs or GaAs barriers is experimentally examined. We find a slightly weaker exciton-LO-phonon coupling and increased linewidth of the phonon replicas for the QDs with GaAs barriers compared to the ones with AlGaAs barriers. These results, combined with the fact that the LO-phonon energy of the exciton is the same for both kinds of dots, are taken as evidence that the excitons mainly couple to LO-phonons within the QDs. (C) 2011 American Institute of Physics. (doi:10.1063/1.3600781)
Vapor-phase epitaxy , Photoluminescence , Biexcitons , Absorption , Gaas , Aluminium compounds , Gallium arsenide , III-V semiconductors , Indium compounds , Phonon-exciton interactions , Semiconductor quantum dots , Quantum dots , Excitons , Phonons , Photoluminescence , Charged excitons
Dufåker, D., Mereni, L. O., Karlsson, K. F., Dimastrodonato, V., Juska, G., Holtz, P. O. and Pelucchi, E. (2011) 'Exciton-phonon coupling in single quantum dots with different barriers', Applied Physics Letters, 98(25), pp. 251911. doi: 10.1063/1.3600781
© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dufåker, D., Mereni, L. O., Karlsson, K. F., Dimastrodonato, V., Juska, G., Holtz, P. O. and Pelucchi, E. (2011) 'Exciton-phonon coupling in single quantum dots with different barriers', Applied Physics Letters, 98(25), pp. 251911 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3600781