Exciton-phonon coupling in single quantum dots with different barriers

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dc.contributor.authorDufaker, D.
dc.contributor.authorMereni, Lorenzo O.
dc.contributor.authorKarlsson, K. F.
dc.contributor.authorDimastrodonato, Valeria
dc.contributor.authorJuska, Gediminas
dc.contributor.authorHoltz, P. O.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderSvenska Forskningsrådet Formas
dc.contributor.funderKnut och Alice Wallenbergs Stiftelse
dc.contributor.funderLinköpings Universitet
dc.contributor.funderHigher Education Authority
dc.date.accessioned2017-07-28T11:04:40Z
dc.date.available2017-07-28T11:04:40Z
dc.date.issued2011
dc.description.abstractThe coupling between longitudinal-optical (LO) phonons and neutral excitons in two different kinds of InGaAs pyramidal quantum dots (QDs) embedded in either AlGaAs or GaAs barriers is experimentally examined. We find a slightly weaker exciton-LO-phonon coupling and increased linewidth of the phonon replicas for the QDs with GaAs barriers compared to the ones with AlGaAs barriers. These results, combined with the fact that the LO-phonon energy of the exciton is the same for both kinds of dots, are taken as evidence that the excitons mainly couple to LO-phonons within the QDs. (C) 2011 American Institute of Physics. (doi:10.1063/1.3600781)en
dc.description.sponsorshipIrish Higher Education Authority (Program for Research in Third Level Institutions 2007-2011 via the INSPIRE program); Science Foundation Ireland (Grant Nos. 05/IN.1/I25 and 08/RFP/MTR/1659); Swedish Research Council; K. A. Wallenberg Foundation (Equipment grants); Linköping University (Font-D)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid251911
dc.identifier.citationDufåker, D., Mereni, L. O., Karlsson, K. F., Dimastrodonato, V., Juska, G., Holtz, P. O. and Pelucchi, E. (2011) 'Exciton-phonon coupling in single quantum dots with different barriers', Applied Physics Letters, 98(25), pp. 251911. doi: 10.1063/1.3600781en
dc.identifier.doi10.1063/1.3600781
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued25
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4319
dc.identifier.volume98
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3600781
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dufåker, D., Mereni, L. O., Karlsson, K. F., Dimastrodonato, V., Juska, G., Holtz, P. O. and Pelucchi, E. (2011) 'Exciton-phonon coupling in single quantum dots with different barriers', Applied Physics Letters, 98(25), pp. 251911 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3600781en
dc.subjectVapor-phase epitaxyen
dc.subjectPhotoluminescenceen
dc.subjectBiexcitonsen
dc.subjectAbsorptionen
dc.subjectGaasen
dc.subjectAluminium compoundsen
dc.subjectGallium arsenideen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectPhonon-exciton interactionsen
dc.subjectSemiconductor quantum dotsen
dc.subjectQuantum dotsen
dc.subjectExcitonsen
dc.subjectPhononsen
dc.subjectPhotoluminescenceen
dc.subjectCharged excitonsen
dc.titleExciton-phonon coupling in single quantum dots with different barriersen
dc.typeArticle (peer-reviewed)en
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