Optical emission of strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers

Simple item page
dc.contributor.authorPavarelli, Nicola
dc.contributor.authorOchalski, Tomasz J.
dc.contributor.authorMurphy-Armando, Felipe
dc.contributor.authorHuo, Y.
dc.contributor.authorSchmidt, Michael
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorHarris, J. S.
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-05-23T14:43:17Z
dc.date.available2016-05-23T14:43:17Z
dc.date.issued2013-04-25
dc.date.updated2015-08-20T10:04:52Z
dc.description.abstractWe studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the electronegativity of the layer in contact with Ge, leading to different types of optical transitions in the heterostructure. When group-V atoms compose the interfaces, only electrons are confined in Ge, whereas both carriers are confined when the interface consists of group-III atoms. The different carrier confinement results in different emission dynamics behavior. This study provides a solution to obtain efficient light emission from Ge.en
dc.description.sponsorshipScience Foundation Ireland (SFI grants No. 07/IN.1/I929, No. 07/IN.1/I1810, and No. 09/SIRG/I1621); Enterprise Ireland (Grant No. RE/2007/006); Higher Education Authority (INSPIRE programme under the HEA PRTLI Cycle 4, National Development Plan 2007-2013.)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid177404
dc.identifier.citationPavarelli, N., Ochalski, T. J., Murphy-Armando, F., Huo, Y., Schmidt, M., Huyet, G. & Harris, J. S. (2013) ‘Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers’, Physical Review Letters, 110, 177404. http://dx.doi.org/10.1103/PhysRevLett.110.177404en
dc.identifier.doi10.1103/PhysRevLett.110.177404
dc.identifier.endpage177404 (5)en
dc.identifier.issn0031-9007
dc.identifier.journaltitlePhysical Review Lettersen
dc.identifier.other1079-7114
dc.identifier.startpage177404 (1)en
dc.identifier.urihttps://hdl.handle.net/10468/2602
dc.identifier.volume110en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.relation.urihttp://link.aps.org/doi/10.1103/PhysRevLett.110.177404
dc.rights© 2013 American Physical Societyen
dc.subjectGermaniumen
dc.subjectBand offsetsen
dc.subjectCarrier confinementsen
dc.subjectEmission dynamicsen
dc.subjectInGaAs alloysen
dc.subjectOptical emissionsen
dc.subjectGe quantum wellen
dc.titleOptical emission of strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layersen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
PhysRevLett.110.177404.pdf
Size:
1.7 MB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Physics - Journal Articles
Tyndall National Institute - Journal Articles