High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

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dc.contributor.authorBurke, Micheal
dc.contributor.authorBlake, Alan
dc.contributor.authorDjara, Vladimir
dc.contributor.authorO'Connell, Dan
dc.contributor.authorPovey, Ian M.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMonaghan, Scott
dc.contributor.authorScully, Jim
dc.contributor.authorMurphy, Richard
dc.contributor.authorHurley, Paul K.
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorQuinn, Aidan J.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2022-06-22T15:15:13Z
dc.date.available2022-06-22T15:15:13Z
dc.date.issued2014-07-28
dc.date.updated2022-06-22T14:55:25Z
dc.description.abstractThe authors report on the structural and electrical properties of TiN/Al2O3/TiN metal–insulator–metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μm2 and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm2 at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.en
dc.description.sponsorshipHigher Education Authority (PRTLI programs (cycle 4 “INSPIRE” and cycle 5 “TYFFANI”))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid01A103en
dc.identifier.citationBurke, M., Blake, A., Djara, V., O'Connell, D., Povey, I. M., Cherkaoui, K., Monaghan, S., Scully, J., Murphy, R., Hurley, P. K., Pemble, M. E. and Quinn, A. J. (2014) 'High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition', Journal of Vacuum Science and Technology A, 33(1), 01A103 (5pp). doi: 10.1116/1.4891319en
dc.identifier.doi10.1116/1.4891319en
dc.identifier.endpage5en
dc.identifier.issn0734-2101
dc.identifier.issued1en
dc.identifier.journaltitleJournal of Vacuum Science and Technology Aen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/13311
dc.identifier.volume33en
dc.language.isoenen
dc.publisherAmerican Institute of Physics on behalf of the American Vacuum Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/en
dc.rights© 2014, American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared as: Burke, M., Blake, A., Djara, V., O'Connell, D., Povey, I. M., Cherkaoui, K., Monaghan, S., Scully, J., Murphy, R., Hurley, P. K., Pemble, M. E. and Quinn, A. J. (2014) 'High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition', Journal of Vacuum Science and Technology A, 33(1), 01A103 (5pp), doi: 10.1116/1.4891319, and may be found at: https://doi.org/10.1116/1.4891319en
dc.subjectTiN/Al2O3/TiN metal–insulator–metal (MIM) capacitor structuresen
dc.titleHigh aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer depositionen
dc.typeArticle (peer-reviewed)en
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