Back-gated Nb-doped MoS2 junctionless field-effect-transistors

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dc.contributor.authorMirabelli, Gioele
dc.contributor.authorSchmidt, Michael
dc.contributor.authorBrendan, Sheehan
dc.contributor.authorKarim, Cherkaoui
dc.contributor.authorScott, Monaghan
dc.contributor.authorIan, Povey
dc.contributor.authorMelissa, McCarthy
dc.contributor.authorBell, Alan P.
dc.contributor.authorNagle, Roger
dc.contributor.authorCrupi, Felice
dc.contributor.authorHurley, Paul K.
dc.contributor.authorRay, Duffy
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2019-11-04T09:42:54Z
dc.date.available2019-11-04T09:42:54Z
dc.date.issued2016-02-26
dc.description.abstractElectrical measurements were carried out to measure the performance and evaluate the characteristics of MoS2 flakes doped with Niobium (Nb). The flakes were obtained by mechanical exfoliation and transferred onto 85 nm thick SiO2 oxide and a highly doped Si handle wafer. Ti/Au (5/45 nm) deposited on top of the flake allowed the realization of a back-gate structure, which was analyzed structurally through Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). To best of our knowledge this is the first cross-sectional TEM study of exfoliated Nb-doped MoS2 flakes. In fact to date TEM of transition-metal-dichalcogenide flakes is extremely rare in the literature, considering the recent body of work. The devices were then electrically characterized by temperature dependent Ids versus Vds and Ids versus Vbg curves. The temperature dependency of the device shows a semiconductor behavior and, the doping effect by Nb atoms introduces acceptors in the structure, with a p-type concentration 4.3 × 1019 cm−3 measured by Hall effect. The p-type doping is confirmed by all the electrical measurements, making the structure a junctionless transistor. In addition, other parameters regarding the contact resistance between the top metal and MoS2 are extracted thanks to a simple Transfer Length Method (TLM) structure, showing a promising contact resistivity of 1.05 × 10−7 Ω/cm2 and a sheet resistance of 2.36 × 102 Ω/sq.en
dc.description.sponsorshipHigher Education Authority (Grant Agreement no. HEA PRTLI5)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid025323en
dc.identifier.citationMirabelli, G., Schmidt, M., Sheehan, B., Cherkaoui, K., Monaghan, S., Povey, I., McCarthy, M., Bell, A. P., Nagle, R., Crupi, F., Hurley, P. K. and Duffy, R. (2016) 'Back-gated Nb-doped MoS2 junctionless field-effect-transistors', AIP Advances, 6(2), 025323 (10pp) DOI: 10.1063/1.4943080en
dc.identifier.doi10.1063/1.4943080en
dc.identifier.eissn2158-3226
dc.identifier.endpage10en
dc.identifier.issued2en
dc.identifier.journaltitleAIP Advancesen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8944
dc.identifier.volume6en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/13/US/I2862/IE/Understanding the Nature of Interfaces in Two Dimensional Electronic Devises (UNITE)/en
dc.rights©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectContact resistanceen
dc.subjectElectrical conductivityen
dc.subjectField effect transistorsen
dc.subjectGolden
dc.subjectHall effecten
dc.subjectMolybdenum compoundsen
dc.subjectNiobiumen
dc.subjectScanning electron microscopyen
dc.subjectSemiconductor dopingen
dc.subjectSemiconductor materialsen
dc.subjectSemiconductor- metal boundariesen
dc.subjectTitaniumen
dc.subjectTransmission electron micen
dc.titleBack-gated Nb-doped MoS2 junctionless field-effect-transistorsen
dc.typeArticle (peer-reviewed)en
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