Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology
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Date
2009
Authors
Feldman, Baruch
Dunham, Scott T.
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Volume Title
Publisher
AIP Publishing
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Abstract
Resistivity augmentation in nanoscale metal interconnects is a performance limiting factor in integrated circuits. Here we present calculations of electron scattering and transmission at the interface between Cu interconnects and their barrier layers, in this case Ta. We also present a semiclassical model to predict the technological impact of this scattering and find that a barrier layer can significantly decrease conductivity, consistent with previously published measurements.(C) 2010 American Institute of Physics. (doi:10.1063/1.3257700)
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Keywords
Total-energy calculations , Wave basis-set , Thin-films , Beta-Ta , Molecular-dynamics , Aluminum films , Resistivity , Metals , Deposition , Transport , Copper , Electrical conductivity , Electrical resistivity , Integrated circuit interconnections , Tantalum , Surface scattering , Interconnects
Citation
Feldman, B. and Dunham, S. T. (2009) 'Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology', Applied Physics Letters, 95(22), pp. 222101. doi: 10.1063/1.3257700
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Copyright
© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Feldman, B. and Dunham, S. T. (2009) 'Calculation of Cu/Ta interface electron transmission and effect on conductivity in nanoscale interconnect technology', Applied Physics Letters, 95(22), pp. 222101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3257700