Electroless nickel/gold Ohmic contacts to p-type GaN

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Lewis, Liam
Casey, Declan P.
Jeyaseelan, Arockia Vimal
Rohan, James F.
Maaskant, Pleun P.
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American Institute of Physics
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A solution based approach to forming Ohmic contacts to p-type GaN is described. Electroless plated Ni/Au contacts are shown to compare favorably with traditional evaporated contacts, with contact resistivities rho(c) in the region of 10(-2) Omega cm(2). These values are readily achieved after a rapid thermal annealing in an O-2 atmosphere. The tunneling nature of the contact is confirmed via temperature dependant measurements. X-ray diffraction measurements confirm the similarity between evaporated and plated contacts. Current-photocurrent (I-L) and current-voltage (I-V) measurements from light emitting diodes formed using an electroless p-type contact are shown. Electroless deposition of the contact metals allows for a reduction in processing time and cost.
Ohmic contacts , Tunnelling , III-V semiconductors , Photoconductivity , X-ray diffraction , Rapid thermal annealing , Nickel , Wide band gap semiconductors , Electroplating , Gallium compounds , Contact resistance , Gold
LEWIS, L., CASEY, D. P., JEYASEELAN, A. V., ROHAN, J. F. & MAASKANT, P. P. 2008. Electroless nickel/gold Ohmic contacts to p-type GaN. Applied Physics Letters, 92, 062113. http://dx.doi.org/10.1063/1.2842425
Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 92 (6), 062113 and may be found at http://scitation.aip.org/content/aip/journal/apl/92/6/10.1063/1.2842425