Electroless nickel/gold Ohmic contacts to p-type GaN

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dc.contributor.authorLewis, Liam
dc.contributor.authorCasey, Declan P.
dc.contributor.authorJeyaseelan, Arockia Vimal
dc.contributor.authorRohan, James F.
dc.contributor.authorMaaskant, Pleun P.
dc.contributor.funderEnterprise Irelanden
dc.date.accessioned2014-03-18T10:48:00Z
dc.date.available2014-03-18T10:48:00Z
dc.date.issued2008-02
dc.date.updated2013-12-18T17:34:02Z
dc.description.abstractA solution based approach to forming Ohmic contacts to p-type GaN is described. Electroless plated Ni/Au contacts are shown to compare favorably with traditional evaporated contacts, with contact resistivities rho(c) in the region of 10(-2) Omega cm(2). These values are readily achieved after a rapid thermal annealing in an O-2 atmosphere. The tunneling nature of the contact is confirmed via temperature dependant measurements. X-ray diffraction measurements confirm the similarity between evaporated and plated contacts. Current-photocurrent (I-L) and current-voltage (I-V) measurements from light emitting diodes formed using an electroless p-type contact are shown. Electroless deposition of the contact metals allows for a reduction in processing time and cost.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLEWIS, L., CASEY, D. P., JEYASEELAN, A. V., ROHAN, J. F. & MAASKANT, P. P. 2008. Electroless nickel/gold Ohmic contacts to p-type GaN. Applied Physics Letters, 92, 062113. http://dx.doi.org/10.1063/1.2842425en
dc.identifier.doi10.1063/1.2842425
dc.identifier.endpage062113-3en
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued6en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage062113en
dc.identifier.urihttps://hdl.handle.net/10468/1470
dc.identifier.volume92en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urihttp://scitation.aip.org/content/aip/journal/apl/92/6/10.1063/1.2842425
dc.rightsCopyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 92 (6), 062113 and may be found at http://scitation.aip.org/content/aip/journal/apl/92/6/10.1063/1.2842425en
dc.subjectOhmic contactsen
dc.subjectTunnellingen
dc.subjectIII-V semiconductorsen
dc.subjectPhotoconductivityen
dc.subjectX-ray diffractionen
dc.subjectRapid thermal annealingen
dc.subjectNickelen
dc.subjectWide band gap semiconductorsen
dc.subjectElectroplatingen
dc.subjectGallium compoundsen
dc.subjectContact resistanceen
dc.subjectGolden
dc.titleElectroless nickel/gold Ohmic contacts to p-type GaNen
dc.typeArticle (peer-reviewed)en
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